Nikiforova Polina K, Bubenov Sergei S, Platonov Vadim B, Kumskov Andrey S, Kononov Nikolay N, Kuznetsova Tatyana A, Dorofeev Sergey G
Department of Chemistry, Lomonosov Moscow State University, 1-3 Leninskie Gory, Moscow, Russia.
Shubnikov Institute of Crystallography, Federal Scientific Research Centre «Crystallography and Photonics», Russian Academy of Sciences, 59 Leninskiy prospekt, Moscow, Russia.
Beilstein J Nanotechnol. 2023 Sep 26;14:971-979. doi: 10.3762/bjnano.14.80. eCollection 2023.
This article describes an approach for synthesizing silicon phosphide nanoparticles with a defective zinc blende structure under mild conditions through thermal annealing of hydrogenated silicon nanoparticles with red phosphorus. The synthesized SiP nanoparticles were analyzed using FTIR, XRD, electron diffraction, EDX, TEM, Raman spectroscopy, X-ray fluorescence spectrometry, and UV-vis spectrophotometry. For the isolated cubic SiP phase, a cell parameter of = 5.04 Å was determined, and the bandgap was estimated to be equal to 1.25 eV. Because of the nanoscale dimensions of the obtained SiP nanoparticles, the product may exhibit several exceptional properties as a precursor for diffusion doping of wafers and as anode material for Li-ion batteries. A similar method with a hydrogenation step offers the possibility to obtain other compounds, such as silicon selenides, arsenides, and sulfides.
本文介绍了一种在温和条件下通过用红磷对氢化硅纳米颗粒进行热退火来合成具有缺陷闪锌矿结构的磷化硅纳米颗粒的方法。使用傅里叶变换红外光谱（FTIR）、X射线衍射（XRD）、电子衍射、能谱分析（EDX）、透射电子显微镜（TEM）、拉曼光谱、X射线荧光光谱法和紫外可见分光光度法对合成的SiP纳米颗粒进行了分析。对于分离出的立方SiP相，确定其晶胞参数a = 5.04 Å，并且估计其带隙等于1.25 eV。由于所获得的SiP纳米颗粒的纳米级尺寸，该产物作为用于晶片扩散掺杂的前驱体以及作为锂离子电池的负极材料可能表现出几种优异的性能。具有氢化步骤的类似方法提供了获得其他化合物的可能性，例如硅硒化物、砷化物和硫化物。
