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四元货币金属HgSBr的热电和热力学性质研究。

Investigations on the thermoelectric and thermodynamic properties of quaternary coinage metal HgSBr.

作者信息

M Hariharan, R D Eithiraj

机构信息

Division of Physics, School of Advanced Sciences, Vellore Institute of Technology (VIT), Chennai, 600127, Tamil Nadu, India.

出版信息

Heliyon. 2023 Aug 25;9(9):e19438. doi: 10.1016/j.heliyon.2023.e19438. eCollection 2023 Sep.

Abstract

We present the findings of a thorough first-principles analysis of physical parameters related to the ground state, elastic, electronic, optical, thermodynamic, and transport properties of the quaternary coinage metal-based compound CuHgSBr using the WIEN2k package. The computed equilibrium lattice parameters align well with their experimental equivalents, providing strong support for the validity of the findings. We performed numerical and computational calculations to estimate the elastic constants for the orthorhombic structure with space group . The band structure analysis of CuHgSBr reveals an indirect band gap semiconductor of 0.76 eV, classifying it as a p-type semiconductor. We also calculated the optical properties within the energy range of 0-13.56 eV. Moreover, we investigated the effective mass, exciton binding energy, and exciton Bohr radius, which indicated that CuHgSBr exhibits a weak exciton binding energy and belongs to the Mott-Wannier type exciton category. Using the Boltzmann transport theory, along with the constant relaxation time and Slack equations, we determined the thermoelectric properties and lattice thermal conductivity of CuHgSBr. Notably, the figure of merit at 800 K is calculated to be 0.54, which is encouraging for potential thermoelectric applications. The comprehensive research study we conducted provides valuable insights for experimental research across multiple physical properties, as the material is being theoretically examined for the first time in this full prospectus.

摘要

我们展示了使用WIEN2k软件包对基于四元货币金属的化合物CuHgSBr的基态、弹性、电子、光学、热力学和输运性质相关物理参数进行全面第一性原理分析的结果。计算得到的平衡晶格参数与其实验值吻合良好,为研究结果的有效性提供了有力支持。我们进行了数值和计算计算,以估计具有空间群的正交结构的弹性常数。CuHgSBr的能带结构分析表明其为间接带隙半导体,带隙为0.76 eV,将其归类为p型半导体。我们还计算了0-13.56 eV能量范围内的光学性质。此外,我们研究了有效质量、激子结合能和激子玻尔半径,结果表明CuHgSBr表现出较弱的激子结合能,属于莫特-万尼尔型激子类别。使用玻尔兹曼输运理论以及恒定弛豫时间和斯莱克方程,我们确定了CuHgSBr的热电性质和晶格热导率。值得注意的是,800 K时的品质因数计算为0.54,这对于潜在的热电应用来说是令人鼓舞的。我们进行的全面研究为跨多种物理性质的实验研究提供了有价值的见解,因为这种材料在本完整说明书中是首次进行理论研究。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/934b/10558493/9470bbe3840c/gr1.jpg

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