Hu Junxiong, Han Yulei, Chi Xiao, Omar Ganesh Ji, Al Ezzi Mohammed Mohammed Esmail, Gou Jian, Yu Xiaojiang, Andrivo Rusydi, Watanabe Kenji, Taniguchi Takashi, Wee Andrew Thye Shen, Qiao Zhenhua, Ariando A
Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore.
Adv Mater. 2024 Feb;36(8):e2305763. doi: 10.1002/adma.202305763. Epub 2023 Dec 6.
Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm Fe O , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.
具有大且可调自旋分裂能的自旋极化二维(2D)材料为二维自旋电子学领域带来了希望。虽然石墨烯一直是典型的二维材料,但其自旋特性和可调性有限。在此,这项工作展示了在零外加磁场下,石墨烯中出现了强大的自旋极化,其自旋分裂能大且可调,高达132毫电子伏特。通过石墨烯与底层亚铁磁性氧化物绝缘层TmFeO之间的磁交换相互作用诱导出自旋极化,这一点通过其X射线磁圆二色性(XMCD)得到证实。通过分析测量的舒布尼科夫 - 德哈斯(SdH)振荡作为外加电场的函数所绘制的朗道扇图中的位移,直接测量并可视化了自旋分裂能,结果显示与第一性原理和机器学习计算结果一致。此外,通过场冷可以在98至166毫电子伏特的宽范围内调节观察到的自旋分裂能。这些方法和结果适用于其他二维(磁性)材料和异质结构,并为开发下一代自旋逻辑和存储器件提供了巨大潜力。