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亚铁磁氧化物绝缘体上石墨烯中的可调自旋极化态

Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator.

作者信息

Hu Junxiong, Han Yulei, Chi Xiao, Omar Ganesh Ji, Al Ezzi Mohammed Mohammed Esmail, Gou Jian, Yu Xiaojiang, Andrivo Rusydi, Watanabe Kenji, Taniguchi Takashi, Wee Andrew Thye Shen, Qiao Zhenhua, Ariando A

机构信息

Department of Physics, National University of Singapore, Singapore, 117542, Singapore.

Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore.

出版信息

Adv Mater. 2024 Feb;36(8):e2305763. doi: 10.1002/adma.202305763. Epub 2023 Dec 6.

Abstract

Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm Fe O , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.

摘要

具有大且可调自旋分裂能的自旋极化二维(2D)材料为二维自旋电子学领域带来了希望。虽然石墨烯一直是典型的二维材料,但其自旋特性和可调性有限。在此,这项工作展示了在零外加磁场下,石墨烯中出现了强大的自旋极化,其自旋分裂能大且可调,高达132毫电子伏特。通过石墨烯与底层亚铁磁性氧化物绝缘层TmFeO之间的磁交换相互作用诱导出自旋极化,这一点通过其X射线磁圆二色性(XMCD)得到证实。通过分析测量的舒布尼科夫 - 德哈斯(SdH)振荡作为外加电场的函数所绘制的朗道扇图中的位移,直接测量并可视化了自旋分裂能,结果显示与第一性原理和机器学习计算结果一致。此外,通过场冷可以在98至166毫电子伏特的宽范围内调节观察到的自旋分裂能。这些方法和结果适用于其他二维(磁性)材料和异质结构,并为开发下一代自旋逻辑和存储器件提供了巨大潜力。

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