Lin Mu, Tian Wei, Wang Jieru, Gao Ruiqin, Fan Fangli, Qin Zhi, Cao Shuchun, Ran Zhaohui
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.
Appl Radiat Isot. 2023 Dec;202:111059. doi: 10.1016/j.apradiso.2023.111059. Epub 2023 Oct 5.
With an increase of stopping operation of nuclear reactors worldwide, the supply of medical Mo becomes difficult and thus many efforts have been made to find an alternative. A process based on an electron linear accelerator (linac) system and aMo target via the Mo (γ,n)Mo reaction receives a lot of attention due to the relatively low level of co-produced impurities. This process has been recently developed at the Institute of Modern Physics (IMP) and the Monte Carlo simulation was used to optimize the target system before operating pilot irradiation experiments. First, tungsten and tantalum, as mostly used converter materials, were tested. The yield of Mo was evaluated with respect to the converter thickness and the electron beam energy by means of Geant4 simulations. Besides, the specific activity of Mo produced from one-stage approach (Mo target without a converter) and two-stage approach (Mo target with a converter) was compared when varying the testing conditions. The two-stage approach was selected for the experiment due to the higher specific activity of produced Mo at all tested conditions. A target consisting of a 10 mm thickness of the Mo tablets and a 2.4 mm thick Ta converter was irradiated for 40 h (50 MeV with 0.2 μA). The Geant4-calculated specific activity of generated Mo at the end of bombardment agreed well with the experimental value, which proved high level of accuracy of the Geant4 simulation. In future studies, the Geant4 simulation will be used to optimize the production process when using high power linac system.
随着全球范围内核反应堆停止运行的增加,医用钼的供应变得困难,因此人们做出了许多努力来寻找替代方案。一种基于电子直线加速器(linac)系统和通过钼(γ,n)钼反应的钼靶的工艺,由于共产生的杂质水平相对较低而受到广泛关注。该工艺最近由中国科学院近代物理研究所开发,并在进行中试辐照实验之前,使用蒙特卡罗模拟对靶系统进行了优化。首先,测试了作为最常用转换材料的钨和钽。通过Geant4模拟评估了钼的产率与转换体厚度和电子束能量的关系。此外,在改变测试条件时,比较了单级方法(无转换体的钼靶)和两级方法(有转换体的钼靶)产生的钼的比活度。由于在所有测试条件下产生的钼的比活度较高,因此选择两级方法进行实验。用一个由10毫米厚的钼片和2.4毫米厚的钽转换体组成的靶进行了40小时的辐照(50兆电子伏特,0.2微安)。Geant4计算的轰击结束时产生的钼的比活度与实验值吻合良好,这证明了Geant4模拟的高精度。在未来的研究中,Geant4模拟将用于优化使用高功率直线加速器系统时的生产工艺。