Feng Siyu, Li Jiangxu, Feng Lizhi, Liu Zitong, Wang Junchao, Cui Cong, Zhou Ouxiang, Deng Lijie, Xu Hanning, Leng Bing, Chen Xing-Qiu, Jiang Xin, Liu Baodan, Zhang Xinglai
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenyang, 110016, China.
School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, 110016, China.
Adv Mater. 2023 Dec;35(49):e2308090. doi: 10.1002/adma.202308090. Epub 2023 Oct 27.
Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench-bridged GaN/Ga O /GaN back-to-back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga O . Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as an NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.
由于光电探测器和神经形态视觉传感器（NVS）在光响应特性方面存在固有的速度差异，在单个器件上同时实现这两种器件面临着巨大挑战。在这项工作中，制造了一种沟槽桥接的GaN/Ga₂Oₓ/GaN背靠背双异质结阵列器件，以在单个器件上实现这两种器件的先进功能。有趣的是，通过调制Ga₂Oₓ中的氧空位电离和去电离过程，该器件分别在低电压和高电压下表现出快速光响应和持续光电导行为。因此，通过简单地调整偏置电压的大小，光电器件的作用可以在光电探测器和NVS之间切换。作为光电探测器，该器件能够实现快速光学成像和光通信功能。另一方面，作为NVS，该器件表现出出色的图像传感、图像存储和神经形态视觉预处理能力。利用NVS进行图像预处理可显著提高识别精度和效率。这项工作的结果不仅为在单个光电器件上获得复杂功能提供了一条新途径，也为实现先进的机器人视觉系统和神经形态计算提供了机会。
