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用于神经形态视觉传感器的光电电阻式随机存取存储器。

Optoelectronic resistive random access memory for neuromorphic vision sensors.

机构信息

Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.

Institute of Microelectronics, Peking University, Beijing, China.

出版信息

Nat Nanotechnol. 2019 Aug;14(8):776-782. doi: 10.1038/s41565-019-0501-3. Epub 2019 Jul 15.

Abstract

Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption. Here we show simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviours. The ORRAM arrays enable image sensing and memory functions as well as neuromorphic visual pre-processing with an improved processing efficiency and image recognition rate in the subsequent processing tasks. The proof-of-concept device provides the potential to simplify the circuitry of a neuromorphic visual system and contribute to the development of applications in edge computing and the internet of things.

摘要

神经形态视觉系统具有很大的潜力,可以模拟人类视觉系统的基本功能,甚至超越可见光区域。然而,基于传统图像传感器、存储器和处理单元的人工视觉系统的复杂电路在器件集成和功耗方面带来了严峻的挑战。在这里,我们展示了简单的两端光电阻变随机存取存储器(ORRAM)突触器件,用于高效的神经形态视觉系统,该系统具有非易失性的光电阻开关和可调节的光突触行为。ORRAM 阵列能够实现图像感应和存储功能,以及神经形态视觉预处理,从而提高后续处理任务的处理效率和图像识别率。该概念验证设备具有简化神经形态视觉系统电路的潜力,并有助于边缘计算和物联网应用的发展。

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