Stavrou Michalis, Mühlbach Amelie M, Arapakis Vasilios, Groß Elisabeth, Kratky Tim, Günther Sebastian, Rieger Bernhard, Couris Stelios
Department of Physics, University of Patras, 265 04 Patras, Greece.
Foundation for Research and Technology Hellas-Institute of Chemical Engineering Sciences (FORTH/ICE-HT), 26504 Rio-Patras, Greece.
Nanoscale. 2023 Oct 26;15(41):16636-16649. doi: 10.1039/d3nr03497f.
The present work reports on the ultrafast saturable absorption (SA), optical limiting (OL), and the nonlinear refractive response of hydride-terminated silicon nanosheets (SiNS-H) differently functionalized with styrene and -butyl methacrylate (BuMA), namely, SiNS-styrene and SiNS-BuMA, using 50 fs, 400 nm and 70 fs, 800 nm laser pulses. SiNS-styrene and SiNS-BuMA exhibit dramatically enhanced nonlinear optical (NLO) responses compared to SiNS-H, with their absorptive nonlinearity strongly dependent on the laser excitation wavelength. More specifically, the studied functionalized SiNSs reveal strong SA behavior under 400 nm laser excitation, with NLO absorption coefficients, saturable intensities, and modulation depths comparable to various two-dimensional (2D) materials, known to exhibit strong SA, such as graphene, black phosphorous (BP), some transition metal dichalcogenides (TMDs), and some MXenes. On the other hand, under 800 nm laser excitation, SiNS-styrene and SiNS-BuMA show highly efficient OL performance with OL onset values of about 0.0045 and 0.0065 J cm, respectively, which are significantly lower than those of other 2D nanostructures. In addition, it is shown that both SiNS samples have great potential in already existing Si-based optoelectronic devices for optical-switching applications since they exhibit very strong NLO refraction comparable to that of bulk Si. The results of the present work demonstrate that the chemical functionalization of SiNSs provides a highly efficient strategy for the preparation of 2D Si-based nanostructures with enhanced NLO response in view of several optoelectronic and photonic applications, such as OL, SA, and all-optical switching.
本工作报道了用50 fs、400 nm和70 fs、800 nm激光脉冲对分别用苯乙烯和甲基丙烯酸丁酯(BuMA)进行不同功能化的氢化物封端硅纳米片(SiNS-H),即SiNS-苯乙烯和SiNS-BuMA的超快饱和吸收(SA)、光限幅(OL)和非线性折射响应。与SiNS-H相比,SiNS-苯乙烯和SiNS-BuMA表现出显著增强的非线性光学(NLO)响应,其吸收非线性强烈依赖于激光激发波长。更具体地说,所研究的功能化SiNS在400 nm激光激发下表现出强烈的SA行为,其NLO吸收系数、饱和强度和调制深度与各种已知表现出强SA的二维(2D)材料相当,如石墨烯、黑磷(BP)、一些过渡金属二卤化物(TMD)和一些MXene。另一方面,在800 nm激光激发下,SiNS-苯乙烯和SiNS-BuMA表现出高效的OL性能,OL起始值分别约为0.0045和0.0065 J/cm²,这明显低于其他2D纳米结构。此外,研究表明,这两种SiNS样品在现有的基于Si的光电器件中用于光开关应用具有很大潜力,因为它们表现出与块状Si相当的非常强的NLO折射。本工作的结果表明,鉴于诸如OL、SA和全光开关等多种光电子和光子应用中增强的NLO响应,SiNS的化学功能化为制备二维Si基纳米结构提供了一种高效策略。