Stavrou Michalis, Stathis Aristeidis, Papadakis Ioannis, Lyuleeva-Husemann Alina, Koudoumas Emmanouel, Couris Stelios
Department of Physics, University of Patras, 26504 Patras, Western Greece, Greece.
Institute of Chemical Engineering Sciences (ICE-HT), Foundation for Research and Technology-Hellas (FORTH), 26504 Patras, Western Greece, Greece.
Nanomaterials (Basel). 2021 Dec 29;12(1):90. doi: 10.3390/nano12010090.
The present work reports on the transient nonlinear optical (NLO) responses of two different types of 2D silicon nanosheets (SiNSs), namely hydride-terminated silicon nanosheets (SiNS-H) and 1-dodecene-functionalized silicon nanosheets (SiNS-dodecene). The main motivation of this study was to extend the knowledge regarding the NLO properties of these Si-based materials, for which very few published studies exist so far. For that purpose, the NLO responses of SiNS-H and SiNS-dodecene were investigated experimentally in the nanosecond regime at 532 and 1064 nm using the Z-scan technique, while the obtained results were compared to those of certain recently studied graphene nanosheets. SiNS-dodecene was found to exhibit the largest third-order susceptibility χ values at both excitation wavelengths, most probably ascribed to the presence of point defects, indicating the importance of chemical functionalization for the efficient enhancement and tailoring of the NLO properties of these emerging 2D Si-based materials. Most importantly, the results demonstrated that the present silicon nanosheets revealed comparable and even larger NLO responses than graphene nanosheets. Undoubtedly, SiNSs could be strong competitors of graphene for applications in 2D-material-based photonics and optoelectronics.
本工作报道了两种不同类型的二维硅纳米片（SiNSs），即氢化物封端的硅纳米片（SiNS-H）和1-十二碳烯功能化的硅纳米片（SiNS-十二碳烯）的瞬态非线性光学（NLO）响应。本研究的主要动机是扩展关于这些硅基材料NLO性质的知识，到目前为止，关于这方面的已发表研究非常少。为此，使用Z扫描技术在纳秒范围内于532和1064 nm对SiNS-H和SiNS-十二碳烯的NLO响应进行了实验研究，同时将所得结果与最近研究的某些石墨烯纳米片的结果进行了比较。发现在两个激发波长下，SiNS-十二碳烯均表现出最大的三阶极化率χ值，这很可能归因于点缺陷的存在，表明化学功能化对于有效增强和调控这些新兴的二维硅基材料的NLO性质具有重要意义。最重要的是，结果表明，目前的硅纳米片显示出与石墨烯纳米片相当甚至更大的NLO响应。毫无疑问，在基于二维材料的光子学和光电子学应用中，SiNSs可能成为石墨烯的有力竞争对手。
