Anderson D W, Moore G J, Lester P D
Med Phys. 1986 Sep-Oct;13(5):663-6. doi: 10.1118/1.595870.
A spectrometer with a high-resolution room-temperature silicon detector was used to obtain spectra including characteristic x-ray peaks produced after fluoroscopic beams were incident on W, Pb, and Th absorbers. Characteristic x-ray yield points were obtained from spectra taken at several generator kVp settings which produced x rays with energy above the K-shell absorption edge for each element. A line drawn through the yield points when projected to zero yield served to locate the console setting corresponding to the actual K-absorption edge energy for each absorber. The technique is useful for precision measurement of generator kVp and absolute calibration of indirect kVp measuring devices under operational conditions.
使用一台配有高分辨率室温硅探测器的光谱仪来获取光谱，这些光谱包括在荧光透视束入射到钨、铅和钍吸收体后产生的特征X射线峰。特征X射线产额点是从在几个发生器千伏峰值设置下拍摄的光谱中获得的，这些设置产生的X射线能量高于每种元素的K壳层吸收边。将产额点投影到零产额时所画的线用于确定对应于每个吸收体实际K吸收边能量的控制台设置。该技术对于在运行条件下精确测量发生器千伏峰值以及间接千伏峰值测量设备的绝对校准很有用。
