Zhuo Yuling, Kinloch Ian A, Bissett Mark A
Department of Materials, National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom.
ACS Appl Nano Mater. 2023 Oct 2;6(19):18062-18070. doi: 10.1021/acsanm.3c03322. eCollection 2023 Oct 13.
MoS is a promising semiconducting material that has been widely studied for applications in catalysis and energy storage. The covalent chemical functionalization of MoS can be used to tune the optoelectronic and chemical properties of MoS for different applications. However, 2H-MoS is typically chemically inert and difficult to functionalize directly and thus requires pretreatments such as a phase transition to 1T-MoS or argon plasma bombardment to introduce reactive defects. Apart from being inefficient and inconvenient, these methods can cause degradation of the desirable properties and introduce unwanted defects. Here, we demonstrate that 2H-MoS can be simultaneously electrochemically exfoliated and chemically functionalized in a facile and scalable procedure to fabricate functionalized thin (∼4 nm) MoS layers. The aryl diazonium salts used for functionalization have not only been successfully covalently grafted onto the 2H-MoS, as verified by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, but also aid the exfoliation process by increasing the interlayer spacing and preventing restacking. Electrochemical energy storage is one application area to which this material is particularly suited, and characterization of supercapacitor electrodes using this exfoliated and functionalized material revealed that the specific capacitance was increased by ∼25% when functionalized. The methodology demonstrated for the simultaneous production and functionalization of two-dimensional (2D) materials is significant, as it allows for control over the flake morphology with increased repeatability. This electrochemical functionalization technique could also be extended to other types of transition-metal dichalcogenides (TMDs), which are also typically chemically inert with different functional species to adjust to specific applications.
二硫化钼(MoS)是一种很有前景的半导体材料,已被广泛研究用于催化和能量存储领域。MoS的共价化学功能化可用于调整MoS的光电和化学性质,以满足不同应用的需求。然而,2H-MoS通常具有化学惰性,难以直接进行功能化,因此需要进行预处理,如向1T-MoS的相变或氩等离子体轰击,以引入反应性缺陷。这些方法除了效率低和不方便之外,还会导致所需性能的退化并引入不需要的缺陷。在这里,我们证明了2H-MoS可以通过一种简便且可扩展的方法同时进行电化学剥离和化学功能化,以制备功能化的薄(约4纳米)MoS层。用于功能化的芳基重氮盐不仅如X射线光电子能谱(XPS)和拉曼光谱所证实的那样成功地共价接枝到了2H-MoS上,而且还通过增加层间距和防止重新堆叠来辅助剥离过程。电化学能量存储是这种材料特别适合的一个应用领域,使用这种剥离和功能化材料对超级电容器电极进行表征表明,功能化后比电容增加了约25%。所展示的二维(2D)材料同时制备和功能化的方法具有重要意义,因为它允许以更高的可重复性控制薄片形态。这种电化学功能化技术还可以扩展到其他类型的过渡金属二硫属化物(TMD),这些材料通常也具有化学惰性,可与不同的功能物种配合以适应特定应用。