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无机卤化物钙钛矿材料的温度依赖电子结构计算

calculations of temperature dependent electronic structures of inorganic halide perovskite materials.

作者信息

Jocić Milan, Vukmirović Nenad

机构信息

Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.

出版信息

Phys Chem Chem Phys. 2023 Nov 1;25(42):29017-29031. doi: 10.1039/d3cp02054a.

DOI:10.1039/d3cp02054a
PMID:37860895
Abstract

Despite wide interest in halide perovskite materials, it is still challenging to accurately calculate their electronic structure and its temperature dependence. In this work, we present calculations of the temperature dependence of the electronic structure of CsPbX materials (X = Cl, Br or I) in the cubic form and of the zero temperature electronic structure of the orthorhombic phase of these materials. Phonon-induced temperature dependent band energy renormalization was calculated within the framework of Allen-Heine-Cardona theory, where we exploited the self-consistent procedure to determine both the energy level shifts and their broadenings. The phonon spectrum of the materials was obtained using the self-consistent phonon method since standard density functional perturbation theory calculations in harmonic approximation yield phonon modes with imaginary frequencies due to the fact that the cubic structure is not stable at zero temperature. Our results suggest that low energy phonon modes mostly contribute to phonon-induced band energy renormalization. The calculated values of the band gaps at lowest temperature where the material exhibits a cubic structure are in good agreement with experimental results from the literature. The same is the case for the slope of the temperature dependence of the band gap for the CsPbI material where reliable experimental data are available in the literature. We also found that phonon-induced temperature dependence of the band gap is most pronounced for the conduction band minimum and valence band maximum, while other bands exhibit a weaker dependence.

摘要

尽管卤化物钙钛矿材料备受关注,但准确计算其电子结构及其温度依赖性仍然具有挑战性。在这项工作中,我们给出了立方晶型CsPbX材料(X = Cl、Br或I)电子结构的温度依赖性计算结果,以及这些材料正交相的零温度电子结构。在艾伦 - 海涅 - 卡尔多纳理论框架内计算了声子诱导的温度依赖带能重整化,我们利用自洽程序来确定能级移动及其展宽。由于立方结构在零温度下不稳定,标准密度泛函微扰理论在简谐近似下的计算会产生具有虚频率的声子模式,因此使用自洽声子方法获得了材料的声子谱。我们的结果表明,低能声子模式对声子诱导的带能重整化贡献最大。材料呈现立方结构时最低温度下的带隙计算值与文献中的实验结果吻合良好。对于CsPbI材料,文献中有可靠实验数据的带隙温度依赖性斜率情况也是如此。我们还发现,声子诱导的带隙温度依赖性在导带最小值和价带最大值处最为明显,而其他能带的依赖性较弱。

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