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半导体光阳极上水氧化过程中从顺序质子耦合电子转移到协同质子耦合电子转移的转变

Transition from Sequential to Concerted Proton-Coupled Electron Transfer of Water Oxidation on Semiconductor Photoanodes.

作者信息

Liu Siqin, Wu Lei, Tang Daojian, Xue Jing, Dang Kun, He Hanbin, Bai Shuming, Ji Hongwei, Chen Chuncheng, Zhang Yuchao, Zhao Jincai

机构信息

Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.

University of Chinese Academy of Sciences, Beijing 100049, P. R. China.

出版信息

J Am Chem Soc. 2023 Nov 1;145(43):23849-23858. doi: 10.1021/jacs.3c09410. Epub 2023 Oct 20.

Abstract

Accelerating proton transfer has been demonstrated as key to boosting water oxidation on semiconductor photoanodes. Herein, we study proton-coupled electron transfer (PCET) of water oxidation on five typical photoanodes [i.e., α-FeO, BiVO, TiO, plasmonic Au/TiO, and nickel-iron oxyhydroxide (NiFeOOH)-modified silicon (Si)] by combining the rate law analysis of HO molecules with the H/D kinetic isotope effect (KIE) and operando spectroscopic studies. An unexpected and universal half-order kinetics is observed for the rate law analysis of HO, referring to a sequential proton-electron transfer pathway, which is the rate-limiting factor that causes the sluggish water oxidation performance. Surface modification of the NiFeOOH electrocatalyst is observed to break this limitation and exhibits a normal first-order kinetics accompanied by much enhanced H/D KIE values, facilitating the turnover frequency of water oxidation by 1 order of magnitude. It is the first time that NiFeOOH is found to be a PCET modulator. The rate law analysis illustrates an effective strategy for modulating PCET kinetics of water oxidation on semiconductor surfaces.

摘要

加速质子转移已被证明是提高半导体光阳极上的水氧化反应的关键。在此,我们通过结合HO分子的速率定律分析、H/D动力学同位素效应(KIE)以及原位光谱研究,研究了五种典型光阳极[即α-FeO、BiVO、TiO、等离子体Au/TiO以及氢氧化氧镍(NiFeOOH)修饰的硅(Si)]上的水氧化反应的质子耦合电子转移(PCET)。对于HO的速率定律分析,观察到了意想不到的通用半级动力学,这表明是一个连续的质子-电子转移途径,这是导致水氧化性能迟缓的限速因素。观察到NiFeOOH电催化剂的表面改性打破了这一限制,并表现出正常的一级动力学,同时H/D KIE值大大提高,使水氧化的周转频率提高了1个数量级。首次发现NiFeOOH是一种PCET调节剂。速率定律分析说明了一种调节半导体表面水氧化反应的PCET动力学的有效策略。

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