Yu Jiachen, Foutty Benjamin A, Kwan Yves H, Barber Mark E, Watanabe Kenji, Taniguchi Takashi, Shen Zhi-Xun, Parameswaran Siddharth A, Feldman Benjamin E
Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.
Geballe Laboratory of Advanced Materials, Stanford, CA, 94305, USA.
Nat Commun. 2023 Oct 21;14(1):6679. doi: 10.1038/s41467-023-42275-6.
The flat electronic bands in magic-angle twisted bilayer graphene (MATBG) host a variety of correlated insulating ground states, many of which are predicted to support charged excitations with topologically non-trivial spin and/or valley skyrmion textures. However, it has remained challenging to experimentally address their ground state order and excitations, both because some of the proposed states do not couple directly to experimental probes, and because they are highly sensitive to spatial inhomogeneities in real samples. Here, using a scanning single-electron transistor, we observe thermodynamic gaps at even integer moiré filling factors at low magnetic fields. We find evidence of a field-tuned crossover from charged spin skyrmions to bare particle-like excitations, suggesting that the underlying ground state belongs to the manifold of strong-coupling insulators. From the spatial dependence of these states and the chemical potential variation within the flat bands, we infer a link between the stability of the correlated ground states and local twist angle and strain. Our work advances the microscopic understanding of the correlated insulators in MATBG and their unconventional excitations.
魔角扭曲双层石墨烯(MATBG)中的平带承载着多种相互关联的绝缘基态,其中许多被预测能够支持具有拓扑非平凡自旋和/或谷斯格明子纹理的带电激发。然而,通过实验确定它们的基态序和激发仍然具有挑战性,这既是因为一些所提出的状态并不直接与实验探针耦合,也是因为它们对实际样品中的空间不均匀性高度敏感。在这里,我们使用扫描单电子晶体管,在低磁场下观察到偶数整数莫尔填充因子处的热力学能隙。我们发现了从带电自旋斯格明子到场调谐转变为裸粒子状激发的证据,这表明潜在的基态属于强耦合绝缘体的流形。从这些状态的空间依赖性和平带内的化学势变化,我们推断出相关基态的稳定性与局部扭曲角和应变之间的联系。我们的工作推进了对MATBG中相关绝缘体及其非常规激发的微观理解。