Marchenkov Vyacheslav V, Lukoyanov Alexey V, Baidak Semyon T, Perevalova Alexandra N, Fominykh Bogdan M, Naumov Sergey V, Marchenkova Elena B
M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia.
Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia.
Micromachines (Basel). 2023 Sep 30;14(10):1888. doi: 10.3390/mi14101888.
The electrical resistivity and the Hall effect of topological insulator BiTe and BiSe single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin-orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of BiTe, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV cell (5 K) to 0.307 states eV cell (300 K) and from 0.9 × 10 cm (5 K) to 2.6 × 10 cm (300 K), respectively. On the contrary, in the case of BiSe, the density of states decreases with increasing temperature, from 0.201 states eV cell (5 K) to 0.198 states eV cell (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 × 10 cm (5 K) to 2.81 × 10 cm (300 K).
在4.2至300 K的温度范围以及高达10 T的磁场中，研究了拓扑绝缘体BiTe和BiSe单晶的电阻率和霍尔效应。采用密度泛函方法对这些化合物的电子结构进行了理论计算，考虑了自旋轨道耦合以及5、50和300 K温度下的晶体结构数据。发现费米能级处的电子态密度与载流子浓度之间存在明显的相关性。对于BiTe，费米能级处的态密度和载流子浓度随温度升高而增加，分别从0.296态/eV·晶胞（5 K）增加到0.307态/eV·晶胞（300 K），以及从0.9×10/cm（5 K）增加到2.6×10/cm（300 K）。相反，对于BiSe，态密度随温度升高而降低，从0.201态/eV·晶胞（5 K）降至0.198态/eV·晶胞（300 K），结果电荷载流子浓度也从2.94×10/cm（5 K）降至2.81×10/cm（300 K）。
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