Yin Sujie, Cao Wei, Hu Xiarong, Ge Xinglai, Liu Dong
School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China.
School of Science, Xihua University, Chengdu 610039, China.
Micromachines (Basel). 2023 Oct 21;14(10):1962. doi: 10.3390/mi14101962.
A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (). The super-junction structure enables the device to possess an excellent compromise of breakdown voltage () and specific on-resistance (). Under short-circuit conditions, the depletion of p-pillar, p-shield, and floating p regions can effectively reduce saturation current and improve short-circuit capability. The proposed device has minimum gate-drain charge () and gate-drain capacitance () compared with other devices. Moreover, the formation of floating p regions will not lead to an increase in process complexity. Therefore, the proposed MOSFET can maintain good dynamic and static performance and short-circuit ability together without increasing the difficulty of the process.
本文提出并利用Synopsys Sentaurus TCAD对一种新型超结（SJ）双槽金属氧化物半导体场效应晶体管（DT-MOS）进行了研究。仿真结果表明，所提出的MOSFET具有良好的静态性能和更长的短路耐受时间。超结结构使该器件在击穿电压（）和比导通电阻（）之间实现了优异的折中。在短路条件下，p柱、p屏蔽和浮空p区的耗尽可有效降低饱和电流并提高短路能力。与其他器件相比，所提出的器件具有最小的栅漏电荷（）和栅漏电容（）。此外，浮空p区的形成不会导致工艺复杂度增加。因此，所提出的MOSFET能够在不增加工艺难度的情况下，同时保持良好的动态和静态性能以及短路能力。
