Liang Ruiyang, Sun Chengqian, Li Qingchun
School of Materials Science and Engineering, Liaoning University of Technology, Jinzhou 121000, China.
State Key Laboratory of Metal Material for Marine Equipment and Application, Anshan 114000, China.
Materials (Basel). 2023 Oct 17;16(20):6731. doi: 10.3390/ma16206731.
A grain-oriented steel containing 6.5% Si, characterized by a notable Goss texture, was effectively manufactured through the rolling technique, incorporating both intrinsic inhibitors and additional inhibitors. This investigation focuses on tracking the development of texture and magnetic properties during the manufacturing process and delineates the mechanism underlying secondary recrystallization. The empirical findings clearly demonstrated the significant influence of nitriding duration and quantity on the secondary recrystallization process. In instances where additional nitrogen is absent, the intrinsic inhibitors alone do not lead to secondary recrystallization. However, when the nitriding duration is 90 s and the nitriding amount is 185 ppm, a complete secondary recrystallization structure with a strong Goss texture enables the finished products have excellent magnetic properties. The preferential growth of Goss grains is mainly governed by the enhanced mobility of high-energy (HE) grain boundaries. With the increase in annealing temperature, the occurrence of 20°-45° HE grain boundaries with Goss grains becomes more progressively frequent. At the secondary recrystallization temperature of 1000 °C, the frequency of 20°-45° HE grain boundaries with Goss grains reaches 62.7%, providing favorable conditions for the abnormal growth of Goss grains. This results in a secondary recrystallization structure predominantly characterized by a strong Goss texture. In light of these observations, the present study provides fundamental theoretical insights and serves as a valuable procedural guideline for the industrial manufacturing of 6.5% Si grain-oriented electrical steels.
一种含有6.5%硅的取向硅钢,具有显著的高斯织构,通过轧制技术有效地制造出来,该技术结合了内在抑制剂和额外抑制剂。本研究着重追踪制造过程中织构和磁性能的发展,并阐述二次再结晶的潜在机制。实证结果清楚地表明了渗氮持续时间和渗氮量对二次再结晶过程的重大影响。在没有额外氮的情况下,仅内在抑制剂不会导致二次再结晶。然而,当渗氮持续时间为90秒且渗氮量为185 ppm时,具有强高斯织构的完整二次再结晶组织使成品具有优异的磁性能。高斯晶粒的择优生长主要由高能(HE)晶界迁移率的提高所控制。随着退火温度的升高,与高斯晶粒相关的20°-45°高能晶界的出现变得越来越频繁。在1000℃的二次再结晶温度下,与高斯晶粒相关的20°-45°高能晶界的频率达到62.7%,为高斯晶粒的异常生长提供了有利条件。这导致了以强高斯织构为主的二次再结晶组织。鉴于这些观察结果,本研究提供了基本的理论见解,并为6.5%硅取向电工钢的工业制造提供了有价值的工艺指导。