Xu Zhanyi, Sha Yuhui, He Zhenghua, Zhang Fang, Liu Wei, Zhang Huabing, Zuo Liang
Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China.
School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.
Materials (Basel). 2021 Sep 17;14(18):5383. doi: 10.3390/ma14185383.
Matrix microstructure and texture controlling is an important way to optimize Goss ({110}<001>) abnormal grain growth (AGG) in high magnetic induction grain-oriented silicon (Hi-B) steel during primary recrystallization. In the present work, a matrix with homogeneous grain size and favorable texture components was obtained through two-stage normalized annealing followed by primary recrystallization. Furthermore, secondary recrystallization was performed for sharp Goss orientation by slow heating and purified annealing. It was found that plenty of island grains, which occurred and disappeared gradually, accompanied the process of AGG. Through analyzing the evolution of microstructure and texture, we realized that the formation of island grains was related to the large-size grains in matrix, and the elimination of that was attributed to the special grain boundaries which satisfied both coincident site lattice (CSL) and high-energy (HE) models. It was essential to control grain size and favorable orientations in matrix comprehensively for the high-efficient abnormal growing of sharp Goss orientation, through which excellent magnetic properties could be obtained simultaneously.
基体微观结构和织构控制是优化高磁感取向硅钢（Hi-B钢）初次再结晶过程中高斯({110}<001>)异常晶粒长大（AGG）的重要途径。在本工作中，通过两段式正火退火然后进行初次再结晶，获得了具有均匀晶粒尺寸和良好织构成分的基体。此外，通过缓慢加热和净化退火进行二次再结晶以获得尖锐的高斯取向。研究发现，大量岛状晶粒伴随着AGG过程逐渐出现和消失。通过分析微观结构和织构的演变，我们认识到岛状晶粒的形成与基体中的大尺寸晶粒有关，而其消除归因于同时满足重合位置点阵（CSL）和高能（HE）模型的特殊晶界。全面控制基体中的晶粒尺寸和良好取向对于高效异常生长出尖锐的高斯取向至关重要，通过这种方式可以同时获得优异的磁性能。
