Wen Hua-Chiang, Wu Ssu-Kuan, Liu Cheng-Wei, Dai Jin-Ji, Chou Wu-Ching
Department of Electrophysics, College of Sciences, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Nanomaterials (Basel). 2023 Oct 31;13(21):2884. doi: 10.3390/nano13212884.
The nanotribological properties of aluminum gallium nitride (AlGaN) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important role, which was directly influencing the strength of the bonding forces and the shear resistance. It was verified that the measured friction coefficient (μ) values of the AlGaN films from the Al compositions (where x = 0.065, 0.085, and 0.137) were in the range of 0.8, 0.5, and 0.3, respectively, for Fn = 2000 μN and 0.12, 0.9, and 0.7, respectively, for Fn = 4000 μN. The values of μ were found to decrease with the increases in the Al compositions. We concluded that the Al composition played an important role in the reconstruction of the crystallites, which induced the transition phenomenon of brittleness to ductility in the AlGaN system.
使用纳米划痕系统研究了在低温生长的GaN/AlN/Si衬底上生长的氮化铝镓（AlGaN）外延膜的纳米摩擦学性能。证实了Al成分起着重要作用，它直接影响结合力的强度和抗剪切力。验证了对于Fn = 2000 μN，Al成分（其中x = 0.065、0.085和0.137）的AlGaN膜的测量摩擦系数（μ）值分别在0.8、0.5和0.3范围内，对于Fn = 4000 μN，分别为0.12、0.9和0.7。发现μ值随着Al成分的增加而降低。我们得出结论，Al成分在微晶的重构中起重要作用，这导致了AlGaN系统中脆性到延性的转变现象。
