Choi Donghyeong, Seo Ji-Woo, Yoon Jongwon, Yu Seung Min, Kwon Jung-Dae, Lee Seoung-Ki, Kim Yonghun
Department of Energy and Electronic Materials, Surface Nano Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea.
School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea.
Nanomaterials (Basel). 2023 Oct 31;13(21):2886. doi: 10.3390/nano13212886.
A novel approach to fabricating a transparent and flexible one-transistor-one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 10 Jones (biased at -1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications.
利用激光剥离（LLO）技术，成功展示了一种在柔性无色聚酰亚胺（CPI）薄膜基板上制造透明且柔性的单晶体管单二极管（1T-1D）图像传感器阵列的新方法。利用透明氧化铟锡（ITO）电极和基于非晶铟镓锌氧化物（a-IGZO）沟道的薄膜晶体管（TFT）背板，采用低温（<90°C）沉积工艺的垂直堆叠p-i-n氢化非晶硅（a-Si:H）光电二极管（PD）与密集排列的14×14像素阵列集成在一起。经低温处理的a-Si:H光电二极管在波长470nm时分别具有31.43 mA/W的响应度和3.0×10琼斯（偏置电压为-1 V）的探测率，表现出合理的性能。柔性图像传感器阵列良好的机械耐久性和稳健性使其能够分别附着在弯曲半径为20、15、10和5mm的曲面上，并能经受1000次弯曲循环。这些研究表明，利用高度柔性和可卷曲的有源矩阵技术在空间应用中动态感测光信号具有巨大潜力。
