Lakhchaura Suraj, Gokul M A, Rahman Atikur
Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India.
Nanotechnology. 2023 Dec 1;35(7). doi: 10.1088/1361-6528/ad0bd3.
Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated BiOSe field effect transistors showed decent field effect mobility of 100 cmVs. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 10A Wand a specific detectivity of 2.55 × 10Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that BiOSe is an excellent candidate for future high-performance optoelectronic device applications.
由于具有超高迁移率、适度带隙、出色的环境稳定性以及高介电常数的原生氧化物，硒氧化铋最近作为一种有前途的二维材料，在下一代电子和光电器件领域受到了极大关注。在本研究中，我们使用常压化学气相沉积系统，在氟金云母上合成了厚度低于十纳米的单晶硒氧化铋纳米片。我们采用无腐蚀性指甲油辅助的干法转移方法，将生长好的样品转移到不同的衬底上。背栅BiOSe场效应晶体管表现出了100 cm²V⁻¹s⁻¹的良好场效应迁移率。光电性能研究显示，其具有1.16×10⁴ A W⁻¹的超高响应率和2.55×10¹² Jones的比探测率。这些样品还表现出宽带光响应和栅极可调的光响应时间。这些结果表明，BiOSe是未来高性能光电器件应用的极佳候选材料。
