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硒吩取代实现用于有机电化学晶体管和葡萄糖传感器的高性能n型聚合物混合离子-电子导体。

Selenophene Substitution Enabled High-Performance n-Type Polymeric Mixed Ionic-Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors.

作者信息

Wu Wenchang, Feng Kui, Wang Yimei, Wang Junwei, Huang Enmin, Li Yongchun, Jeong Sang Young, Woo Han Young, Yang Kun, Guo Xugang

机构信息

Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.

Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea.

出版信息

Adv Mater. 2024 Jan;36(1):e2310503. doi: 10.1002/adma.202310503. Epub 2023 Nov 21.

Abstract

High-performance n-type polymeric mixed ionic-electronic conductors (PMIECs) are essential for realizing organic electrochemical transistors (OECTs)-based low-power complementary circuits and biosensors, but their development still remains a great challenge. Herein, by devising two novel n-type polymers (f-BTI2g-SVSCN and f-BSeI2g-SVSCN) containing varying selenophene contents together with their thiophene-based counterpart as the control, it is demonstrated that gradually increasing selenophene loading in polymer backbones can simultaneously yield lowered lowest unoccupied molecular orbital levels, boosted charge-transport properties, and improved ion-uptake capabilities. Therefore, a remarkable volumetric capacitance (C*) of 387.2 F cm and a state-of-the-art OECT electron mobility (µ ) of 0.48 cm V s are synchronously achieved for f-BSeI2g-SVSCN having the highest selenophene content, yielding an unprecedented geometry-normalized transconductance (g ) of 71.4 S cm and record figure of merit (µC*) value of 191.2 F cm V s for n-type OECTs. Thanks to such excellent performance of f-BSeI2g-SVSCN-based OECTs, a glucose sensor with a remarkably low detection limit of 10 nMm and decent selectivity is further implemented, demonstrating the power of selenophene substitution strategy in enabling high-performance n-type PMIECs for biosensing applications.

摘要

高性能n型聚合物混合离子-电子导体(PMIECs)对于实现基于有机电化学晶体管(OECTs)的低功耗互补电路和生物传感器至关重要,但其发展仍然面临巨大挑战。在此,通过设计两种含不同硒吩含量的新型n型聚合物(f-BTI2g-SVSCN和f-BSeI2g-SVSCN),并以噻吩基对应物作为对照,结果表明,聚合物主链中硒吩负载量的逐渐增加可同时降低最低未占据分子轨道能级、提高电荷传输性能并改善离子吸收能力。因此,对于硒吩含量最高的f-BSeI2g-SVSCN,同步实现了387.2 F cm的显著体积电容(C*)和0.48 cm² V⁻¹ s⁻¹的先进OECT电子迁移率(µ),产生了前所未有的71.4 S cm的几何归一化跨导(g)以及n型OECT的191.2 F cm² V⁻¹ s⁻¹的创纪录品质因数(µC*)值。得益于基于f-BSeI2g-SVSCN的OECT的如此优异性能,进一步实现了检测限低至10 nM且选择性良好的葡萄糖传感器,证明了硒吩取代策略在实现用于生物传感应用的高性能n型PMIECs方面的作用。

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