Kim Jongho, Ren Xinglong, Zhang Youcheng, Fazzi Daniele, Manikandan Suraj, Andreasen Jens Wenzel, Sun Xiuming, Ursel Sarah, Un Hio-Ieng, Peralta Sébastien, Xiao Mingfei, Town James, Marathianos Arkadios, Roesner Stefan, Bui Thanh-Tuan, Ludwigs Sabine, Sirringhaus Henning, Wang Suhao
Laboratoire de Physicochimie des Polymères et des Interfaces, CY Cergy Paris Université, 5 Mail Gay Lussac, Neuville-sur-Oise, 95000, France.
Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
Adv Sci (Weinh). 2023 Oct;10(29):e2303837. doi: 10.1002/advs.202303837. Epub 2023 Aug 7.
n-Type organic electrochemical transistors (OECTs) and organic field-effect transistors (OFETs) are less developed than their p-type counterparts. Herein, polynaphthalenediimide (PNDI)-based copolymers bearing novel fluorinated selenophene-vinylene-selenophene (FSVS) units as efficient materials for both n-type OECTs and n-type OFETs are reported. The PNDI polymers with oligo(ethylene glycol) (EG7) side chains P(NDIEG7-FSVS), affords a high µC* of > 0.2 F cm V s , outperforming the benchmark n-type Pg4NDI-T2 and Pg4NDI-gT2 by two orders of magnitude. The deep-lying LUMO of -4.63 eV endows P(NDIEG7-FSVS) with an ultra-low threshold voltage of 0.16 V. Moreover, the conjugated polymer with octyldodecyl (OD) side chains P(NDIOD-FSVS) exhibits a surprisingly low energetic disorder with an Urbach energy of 36 meV and an ultra-low activation energy of 39 meV, resulting in high electron mobility of up to 0.32 cm V s in n-type OFETs. These results demonstrate the great potential for simultaneously achieving a lower LUMO and a tighter intermolecular packing for the next-generation efficient n-type organic electronics.
n型有机电化学晶体管（OECT）和有机场效应晶体管（OFET）的发展程度低于其p型同类产品。在此，报道了带有新型氟化硒吩-亚乙烯基-硒吩（FSVS）单元的聚萘二酰亚胺（PNDI）基共聚物，作为n型OECT和n型OFET的高效材料。带有低聚乙二醇（EG7）侧链的PNDI聚合物P（NDIEG7-FSVS），提供了大于0.2 F cm V s的高µC*，比基准n型Pg4NDI-T2和Pg4NDI-gT2高出两个数量级。-4.63 eV的深能级LUMO赋予P（NDIEG7-FSVS）0.16 V的超低阈值电压。此外，带有辛基十二烷基（OD）侧链的共轭聚合物P（NDIOD-FSVS）表现出令人惊讶的低能量无序，其乌尔巴赫能量为36 meV，激活能为39 meV，在n型OFET中产生高达0.32 cm V s的高电子迁移率。这些结果证明了为下一代高效n型有机电子器件同时实现更低的LUMO和更紧密的分子间堆积的巨大潜力。
