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高性能n型聚合物混合离子-电子导体:卤素功能化的影响。

High-Performance n-Type Polymeric Mixed Ionic-Electronic Conductors: The Impacts of Halogen Functionalization.

作者信息

Yang Wanli, Feng Kui, Ma Suxiang, Liu Bin, Wang Yimei, Ding Riqing, Jeong Sang Young, Woo Han Young, Chan Paddy Kwok Leung, Guo Xugang

机构信息

Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China.

Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China.

出版信息

Adv Mater. 2024 Jan;36(4):e2305416. doi: 10.1002/adma.202305416. Epub 2023 Dec 3.

Abstract

Developing high-performance n-type polymer mixed ionic-electronic conductors (PMIECs) is a grand challenge, which largely determines their applications in vaious organic electronic devices, such as organic electrochemical transistors (OECTs) and organic thermoelectrics (OTEs). Herein, two halogen-functionalized PMIECs f-BTI2g-TVTF and f-BTI2g-TVTCl built from fused bithiophene imide dimer (f-BTI2) as the acceptor unit and halogenated thienylene-vinylene-thienylene (TVT) as the donor co-unit are reported. Compared to the control polymer f-BTI2g-TVT, the fluorinated f-BTI2g-TVTF shows lower-positioned lowest unoccupied molecular orbital (LUMO), improved charge transport property, and greater ion uptake capacity. Consequently, f-BTI2g-TVTF delivers a state-of-the-art µC* of 90.2 F cm V s with a remarkable electron mobility of 0.41 cm V s in OECTs and an excellent power factor of 64.2 µW m K in OTEs. An OECT-based inverter amplifier is further demonstrated with voltage gain up to 148 V V , which is among the highest values for OECT inverters. Such results shed light on the impacts of halogen atoms on developing high-performing n-type PMIECs.

摘要

开发高性能n型聚合物混合离子-电子导体(PMIECs)是一项巨大挑战,这在很大程度上决定了它们在各种有机电子器件中的应用,如有机电化学晶体管(OECTs)和有机热电材料(OTEs)。在此,报道了两种由稠合联噻吩酰亚胺二聚体(f-BTI2)作为受体单元和卤代亚噻吩基-亚乙烯基-亚噻吩基(TVT)作为供体共单元构建的卤素功能化PMIECs,即f-BTI2g-TVTF和f-BTI2g-TVTCl。与对照聚合物f-BTI2g-TVT相比,氟化的f-BTI2g-TVTF具有更低的最低未占据分子轨道(LUMO)、改善的电荷传输性能和更大的离子吸收能力。因此,f-BTI2g-TVTF在OECTs中实现了90.2 F cm V s的先进μC*,具有0.41 cm V s的显著电子迁移率,在OTEs中具有64.2 μW m K的优异功率因数。进一步展示了基于OECT的反相放大器,电压增益高达148 V V,这是OECT反相器的最高值之一。这些结果揭示了卤素原子对开发高性能n型PMIECs的影响。

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