Xie Biye, Huang Renwen, Jia Shiyin, Lin Zemeng, Hu Junzheng, Jiang Yao, Ma Shaojie, Zhan Peng, Lu Minghui, Wang Zhenlin, Chen Yanfeng, Zhang Shuang
New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
School of Science and Engineering, The Chinese University of Hong Kong, 518172, Shenzhen, China.
Nat Commun. 2023 Nov 14;14(1):7347. doi: 10.1038/s41467-023-42449-2.
In the quest to connect bulk topological quantum numbers to measurable parameters in real materials, current established approaches often necessitate specific conditions, limiting their applicability. Here we propose and demonstrate an approach to link the non-trivial hierarchical bulk topology to the multidimensional partition of local density of states (LDOS), denoted as the bulk-LDOS correspondence. In finite-size topologically nontrivial photonic crystals, we observe the LDOS partitioned into three distinct regions: a two-dimensional interior bulk area, a one-dimensional edge region, and zero-dimensional corner sites. Contrarily, topologically trivial cases exhibit uniform LDOS distribution across the entire two-dimensional bulk area. Our findings provide a general framework for distinguishing topological insulators and uncovering novel aspects of topological directional band-gap materials, even in the absence of in-gap states.
在将体拓扑量子数与实际材料中的可测量参数联系起来的探索中，当前已确立的方法通常需要特定条件，这限制了它们的适用性。在此，我们提出并证明了一种将非平凡分层体拓扑与局部态密度（LDOS）的多维划分联系起来的方法，即体-LDOS对应关系。在有限尺寸的拓扑非平凡光子晶体中，我们观察到LDOS被划分为三个不同区域：二维内部体区域、一维边缘区域和零维角点。相反，拓扑平凡的情况在整个二维体区域呈现均匀的LDOS分布。我们的发现为区分拓扑绝缘体和揭示拓扑定向带隙材料的新特性提供了一个通用框架，即使在不存在带隙态的情况下也是如此。
