Fabunmi Tobiloba Grace, Lee Seokje, Kim Han Ik, Yoo Dongha, Lee Jamin, Kim Imhwan, Ali Asad, Jang Daniel, Lee Sangmin, Lee Changgu, Kim Miyoung, Yi Gyu-Chul
Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Interdisciplinary Program in Brain Science, College of Science, Seoul National University, Seoul 08826, Republic of Korea.
Nanotechnology. 2023 Dec 8;35(8). doi: 10.1088/1361-6528/ad0e92.
We report the growth of single-crystalline GaN microdisk arrays on graphene and their application in flexible light-emitting diodes (LEDs). Graphene layers were directly grown on-sapphire substrates using chemical vapor deposition and employed as substrates for GaN growth. Position-controlled GaN microdisks were laterally overgrown on the graphene layers with a micro-patterned SiOmask using metal-organic vapor-phase epitaxy. The as-grown GaN microdisks exhibited excellent single crystallinity with a uniform in-plane orientation. Furthermore, we fabricated flexible micro-LEDs by achieving heteroepitaxial growth of-GaN, InGaN/GaN multiple quantum wells, and-GaN layers on graphene-coated sapphire substrates. The GaN micro-LED arrays were successfully transferred onto bendable substrates and displayed strong blue light emission under room illumination, demonstrating their potential for integration into flexible optoelectronic devices.
我们报道了在石墨烯上生长单晶 GaN 微盘阵列及其在柔性发光二极管（LED）中的应用。使用化学气相沉积法在蓝宝石衬底上直接生长石墨烯层，并将其用作 GaN 生长的衬底。使用金属有机气相外延法，通过微图案化的 SiO 掩膜在石墨烯层上横向过生长位置可控的 GaN 微盘。生长的 GaN 微盘表现出优异的单晶性，具有均匀的面内取向。此外，我们通过在涂覆有石墨烯的蓝宝石衬底上实现 GaN、InGaN/GaN 多量子阱和 GaN 层的异质外延生长，制造了柔性微型发光二极管。GaN 微发光二极管阵列成功转移到可弯曲衬底上，并在室温照明下显示出强烈的蓝光发射，证明了它们集成到柔性光电器件中的潜力。
