Lin Yu-Chung, Lo Ikai, Tsai Cheng-Da, Wang Ying-Chieh, Huang Hui-Chun, Li Chu-An, Chou Mitch M C, Chang Ting-Chang
Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
Nanomaterials (Basel). 2023 Jun 23;13(13):1922. doi: 10.3390/nano13131922.
Red, green, and blue light InGaN multiple quantum wells have been grown on GaN/γ-LiAlO microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InGaN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InGaN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InGaN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.
通过等离子体辅助分子束外延在GaN/γ-LiAlO微盘衬底上生长了红、绿、蓝光InGaN多量子阱。我们建立了一种机制，通过自下而上的纳米技术，用球棒模型优化InGaN多量子阱微盘的自组装生长。我们表明，仅通过调整铟含量，就可以用单一材料（InGaN）制造出三种不同的红、绿、蓝光微型发光二极管。我们还证明，通过选择合适的缓冲层，可以制造出用于光电子应用的漂亮的InGaN-QW微盘。
