Xu Wangying, Peng Tao, Zhou Changjie, Zhu Deliang
Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.
ACS Appl Mater Interfaces. 2023 Nov 22;15(46):53725-53737. doi: 10.1021/acsami.3c12891. Epub 2023 Nov 7.
Rare earth oxides (REOs) can be used as high-κ gate dielectrics that are at the core of electronic devices. However, a bottleneck remains with regard to obtaining high-performance REO dielectrics due to the serious hygroscopic issue and high defect states. Here, a general boronization strategy is reported to enhance the high-κ REO gate dielectric performance. Complementary characterization reveals that boronization is capable of reducing oxygen vacancies/hydroxyl defects in REOs and suppressing moisture absorption, leading to the improvement of leakage current, breakdown strength (up to 9 MV/cm), and capacitance-frequency stability. Furthermore, oxide transistors based on boronized REO dielectrics demonstrate state-of-the-art device characteristics with a high mobility of 40 cm/V s, a current on/off ratio of 10, a subthreshold swing of 82 mV/dec, a hysteresis of 0.05 V, and superior bias stress stability.
稀土氧化物（REOs）可作为电子器件核心的高κ栅极电介质。然而，由于严重的吸湿问题和高缺陷态，在获得高性能REO电介质方面仍然存在瓶颈。在此，报道了一种通用的硼化策略来提高高κ REO栅极电介质性能。互补表征表明，硼化能够减少REOs中的氧空位/羟基缺陷并抑制吸湿，从而改善漏电流、击穿强度（高达9 MV/cm）和电容-频率稳定性。此外，基于硼化REO电介质的氧化物晶体管展现出了先进的器件特性，具有40 cm²/V s的高迁移率、10的电流开/关比、82 mV/dec的亚阈值摆幅、0.05 V的滞后以及优异的偏置应力稳定性。
