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具有可调电子结构且在压力下增强发射的零维金字塔插层二维双金属卤化物。

0D Pyramid-intercalated 2D Bimetallic Halides with Tunable Electronic Structures and Enhanced Emission under Pressure.

作者信息

Liu Yang, Liang Jiayuan, Deng Zeyu, Guo Songhao, Ji Xiaoqin, Chen Congcong, Canepa Pieremanuele, Lü Xujie, Mao Lingling

机构信息

Department of Chemistry, SUSTech Energy Institute for Carbon Neutrality, Southern, University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China.

Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China.

出版信息

Angew Chem Int Ed Engl. 2023 Dec 21;62(52):e202314977. doi: 10.1002/anie.202314977. Epub 2023 Nov 22.

Abstract

Hybrid metal halides are emerging semiconductors as promising candidates for optoelectronics. The pursuit of hybridizing various dimensions of metal halides remains a desirable yet highly complex endeavor. By utilizing dimension engineering, a diverse array of new materials with intrinsically different electronic and optical properties has been developed. Here, we report a new family of 2D-0D hybrid bimetallic halides, (C N H ) SbCdCl  ⋅ 2H O (SbCd) and (C N H ) SbCuCl  ⋅ 2H O (SbCu). These compounds adopt a new layered structure, consisting of alternating 0D square pyramidal [SbCl ] and 2D inorganic layers sandwiched by organic layers. SbCd and SbCu have optical band gaps of 3.3 and 2.3 eV, respectively. These compounds exhibit weak photoluminescence (PL) at room temperature, and the PL gradually enhances with decreasing temperature. Density functional theory (DFT) calculations reveal that SbCd and SbCu are direct gap semiconductors, where first-principles band gaps follow the experimental trend. Moreover, given the different pressure responses of 0D and 2D components, these materials exhibit highly tunable electronic structures during compression, where a remarkable 11 times enhancement in PL emission is observed for SbCd at 19 GPa. This work opens new avenues for designing new layered bimetallic halides and further manipulating their structures and optoelectronic properties via pressure.

摘要

混合金属卤化物作为新兴的半导体,是光电子学领域颇具潜力的候选材料。探索金属卤化物不同维度的杂化仍是一项令人期待但极具复杂性的工作。通过维度工程,已开发出一系列具有本质不同电子和光学性质的新型材料。在此,我们报道了一类新型的二维 - 零维混合双金属卤化物,(C₆NH₁₅)₂SbCdCl₆ ⋅ 2H₂O(SbCd)和(C₆NH₁₅)₂SbCuCl₆ ⋅ 2H₂O(SbCu)。这些化合物采用了一种新的层状结构,由交替的零维正方锥[ SbCl₅ ]和被有机层夹在中间的二维无机层组成。SbCd和SbCu的光学带隙分别为3.3和2.3电子伏特。这些化合物在室温下表现出微弱的光致发光(PL),并且PL随着温度降低而逐渐增强。密度泛函理论(DFT)计算表明,SbCd和SbCu是直接带隙半导体,其第一性原理带隙遵循实验趋势。此外,鉴于零维和二维组分的不同压力响应,这些材料在压缩过程中表现出高度可调谐的电子结构,其中在19吉帕压力下,SbCd的PL发射增强了显著的11倍。这项工作为设计新型层状双金属卤化物以及通过压力进一步调控其结构和光电性质开辟了新途径。

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