LaGasse Samuel W, Proscia Nicholas V, Cress Cory D, Fonseca Jose J, Cunningham Paul D, Janzen Eli, Edgar James H, Pennachio Daniel J, Culbertson James, Zalalutdinov Maxim, Robinson Jeremy T
Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA.
NRC Postdoctoral Fellow residing at the US Naval Research Laboratory, Washington, DC, 20375, USA.
Adv Mater. 2024 Feb;36(7):e2309777. doi: 10.1002/adma.202309777. Epub 2023 Dec 7.
The layered insulator hexagonal boron nitride (hBN) is a critical substrate that brings out the exceptional intrinsic properties of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). In this work, the authors demonstrate how hBN slabs tuned to the correct thickness act as optical waveguides, enabling direct optical coupling of light emission from encapsulated layers into waveguide modes. Molybdenum selenide (MoSe ) and tungsten selenide (WSe ) are integrated within hBN-based waveguides and demonstrate direct coupling of photoluminescence emitted by in-plane and out-of-plane transition dipoles (bright and dark excitons) to slab waveguide modes. Fourier plane imaging of waveguided photoluminescence from MoSe demonstrates that dry etched hBN edges are an effective out-coupler of waveguided light without the need for oil-immersion optics. Gated photoluminescence of WSe demonstrates the ability of hBN waveguides to collect light emitted by out-of-plane dark excitons.Numerical simulations explore the parameters of dipole placement and slab thickness, elucidating the critical design parameters and serving as a guide for novel devices implementing hBN slab waveguides. The results provide a direct route for waveguide-based interrogation of layered materials, as well as a way to integrate layered materials into future photonic devices at arbitrary positions whilst maintaining their intrinsic properties.
层状绝缘体六方氮化硼(hBN)是一种关键衬底,它能展现出二维(2D)材料(如石墨烯和过渡金属二卤化物(TMDs))的优异本征特性。在这项工作中,作者展示了调整到正确厚度的hBN平板如何作为光波导,实现将封装层的光发射直接光耦合到波导模式中。硒化钼(MoSe₂)和硒化钨(WSe₂)被集成到基于hBN的波导中,并展示了面内和面外跃迁偶极子(亮激子和暗激子)发射的光致发光与平板波导模式的直接耦合。来自MoSe₂的波导光致发光的傅里叶平面成像表明,干法蚀刻的hBN边缘是波导光的有效外耦合器,无需油浸光学器件。WSe₂的门控光致发光证明了hBN波导收集面外暗激子发射光的能力。数值模拟探索了偶极子放置和平板厚度的参数,阐明了关键设计参数,并为实现hBN平板波导的新型器件提供了指导。这些结果为基于波导的层状材料探测提供了一条直接途径,也为将层状材料在保持其本征特性的同时以任意位置集成到未来光子器件中提供了一种方法。