Jadczak Joanna, Kutrowska-Girzycka Joanna, Schindler Janina J, Debus Joerg, Watanabe Kenji, Taniguchi Takashi, Ho Ching-Hwa, Bryja Leszek
Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland.
Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany.
Materials (Basel). 2021 Jan 15;14(2):399. doi: 10.3390/ma14020399.
Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature ( = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A' (WSe) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX at double resonance condition is observed for the first time.
具有独特物理性质的过渡金属二硫属化物(TMD)单层对于新型电子器件的未来应用非常有前景。在TMD单层中,K点处能隙的强且相反的自旋分裂使得可以使用圆偏振光激发具有不同谷和自旋指数组合的载流子,这可进一步用于自旋电子学和谷电子学。由TMD单层和六方氮化硼(hBN)层组成的范德华异质结构的物理性质显著取决于不同类型的相互作用。在此,我们报告在与层间电子 - 声子耦合相关的hBN/WSe/hBN异质结构的发射中,观察到发射强度大幅增加以及激发光的螺旋度得以保留。在低温( = 7 K)反射率对比度和光致发光激发联合实验中,我们发现发射强度的增加归因于双共振,其中激光激发与组合拉曼模式A'(WSe)+ ZO(hBN)与WSe单层中A激子的激发态(2s)和基态(1s)共振。相对于2s态,我们的解释与先前的报告不同,在先前报告中该态被归因于仅存在于hBN封装的WSe单层中的混合激子态。此外,我们观察到电子 - 声子耦合还增强了所有观察到的激子复合体发射中激发光的螺旋度保留。在中性双激子和处于三重态的带负电荷激子(三重子)的发射中获得了超过60%的最高螺旋度保留。此外,据我们所知,首次在双共振条件下观察到中性双激子XX的强烈增强发射。