Guo Jiarui, Ye Bingjie, Gu Yan, Liu Yushen, Yang Xifeng, Xie Feng, Zhang Xiumei, Qian Weiying, Zhang Xiangyang, Lu Naiyan, Yang Guofeng
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
Yancheng Polytechnic college, Yancheng 224005, China.
ACS Appl Mater Interfaces. 2023 Dec 6;15(48):56014-56021. doi: 10.1021/acsami.3c13114. Epub 2023 Nov 23.
Two-dimensional (2D) organic-inorganic hybrid perovskites (OIPs) have exhibited ideal prospects for perovskite photodetectors (PDs) owing to their remarkable environmental stability, tunable band gap, and structural diversity. However, most perovskites face the great challenge of a narrow spectral response. Integrating 2D OIPs with a suitable wide band gap semiconductor gives opportunities to broaden the response spectra. Here, a photodetector based on the BAPbI/GaN heterostructure with a broadband photoresponse covering from the ultraviolet (UV) to visible band is designed. We demonstrate that the device is capable of detecting in the UV region by p-GaN being integrated with BAPbI. The morphology and material optical properties of BAPbI are characterized by transmission electron microscopy (TEM) and photoluminescence (PL). Additionally, the current-voltage (-) characteristics and photoresponses of the BAPbI/GaN heterojunction photodetector are investigated. The response spectrum of the photodetector is broadened from the visible to UV region, exhibiting good rectifying behavior in the dark conditions and a broadband photoresponse from the UV to the visible region. Additionally, the energy band is used to analyze the current mechanism of the BAPbI/GaN heterojunction PD. This study is expected to provide a new insight of optoelectronic devices by integrating 2D OIPs such as BAPbI and wide-band-gap semiconductors such as GaN to broaden the response spectra.
二维（2D）有机-无机杂化钙钛矿（OIPs）因其卓越的环境稳定性、可调节的带隙和结构多样性，在钙钛矿光电探测器（PDs）方面展现出理想的前景。然而，大多数钙钛矿面临着光谱响应窄的巨大挑战。将二维OIPs与合适的宽带隙半导体集成，为拓宽响应光谱提供了机会。在此，设计了一种基于BAPbI/GaN异质结构的光电探测器，其具有从紫外（UV）到可见光波段的宽带光响应。我们证明，通过将p-GaN与BAPbI集成，该器件能够在紫外区域进行探测。利用透射电子显微镜（TEM）和光致发光（PL）对BAPbI的形貌和材料光学性质进行了表征。此外，还研究了BAPbI/GaN异质结光电探测器的电流-电压（I-V）特性和光响应。该光电探测器的响应光谱从可见光区域拓宽到紫外区域，在黑暗条件下表现出良好的整流行为，以及从紫外到可见光区域的宽带光响应。此外，利用能带分析了BAPbI/GaN异质结光电探测器的电流机制。本研究有望通过集成BAPbI等二维OIPs和GaN等宽带隙半导体来拓宽响应光谱，为光电器件提供新的见解。
