Bassi Gaurav, Kaur Damanpreet, Dahiya Rohit, Kumar Mukesh
Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India.
Nanotechnology. 2024 May 24;35(32). doi: 10.1088/1361-6528/ad47c9.
For deep ultraviolet (UV-C) photodetectors, gallium oxide (GaO) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of GaOwith an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtSgroup-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with GaOsensing in UV and PtSbroad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS/GaOheterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS/GaOdevice shows a high responsivity of 38.7 AWand detectivity of 4.8 × 10Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device's fast speed. An interface study between the PtSand GaOwas conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.
对于深紫外（UV-C）光电探测器而言，氧化镓（GaO）因其固有的超宽带隙和高稳定性而成为合适的候选材料。然而，其探测仅限于UV-C区域，这限制了它覆盖更广泛的范围，特别是在可见光和近红外（NIR）区域。因此，构建氧化镓与具有窄带隙的合适材料的异质结构是一种值得采用的弥补方法。在这一类材料中，第10族过渡金属二硫属化物PtS因其窄带隙（0.25 - 1.65 eV）、高迁移率以及用于异质结构合成的稳定性而名列前茅。此外，具有在紫外光下GaO传感以及在可见光和红外范围内PtS宽响应的异质结构可以拓宽从紫外到近红外的光谱范围，并构建宽带光电探测器。在这项工作中，我们制备了一种基于二维 - 三维PtS/GaO异质结构的宽带光电探测器，其探测范围从UV-C到近红外区域。此外，PtS/GaO器件在5 V偏压下1100 nm光照下显示出38.7 A/W的高响应度和4.8×10 Jones的探测率。90 ms/86 ms的快速响应说明了该器件的快速速度。利用X射线光电子能谱和紫外光电子能谱（UPS）对PtS和GaO之间的界面进行了研究，证实了I型能带排列。最后，基于它们的能带排列研究，提出了界面处的载流子传输机制。这项工作为制造用于未来光电器件的大面积高性能二维 - 三维异质结构基光电探测器提供了新的机会。
