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基于固态扩散原位动态热结晶的钙钛矿发光器件

Perovskite Light-Emitting Devices Based on Solid-State Diffusion In Situ Dynamic Thermal Crystallization.

作者信息

Chen Chen, Zhu Yanni, Dou Kainan, Liu Chuang, Yu Chao, Ji Sihang, Wang Jin

机构信息

College of Information Technology, Jilin Normal University, Siping 136000, China.

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130015, China.

出版信息

Micromachines (Basel). 2023 Nov 11;14(11):2084. doi: 10.3390/mi14112084.

Abstract

Due to the excellent photonic and electrical properties of metal halide perovskite materials, perovskite light-emitting devices have the potential to replace OLED devices as the next-generation of commercial light-emitting devices. In this article, we controlled the surface morphology of PbBr using an in situ dynamic thermal crystallization process, which increased the specific surface area of the films and promoted the solid-state diffusion rate. The CsPbBr PeLEDs prepared using this method achieved a maximum current efficiency of 7.1 cd/A at the voltage of 5 V, which was 200% higher than devices prepared using traditional spin-coating processes. These results proved that the in situ thermal dynamic crystallization process effectively improved the film quality of perovskite materials.

摘要

由于金属卤化物钙钛矿材料具有优异的光学和电学性能,钙钛矿发光器件有潜力取代OLED器件成为下一代商业发光器件。在本文中,我们使用原位动态热结晶过程控制了PbBr的表面形貌,这增加了薄膜的比表面积并提高了固态扩散速率。使用该方法制备的CsPbBr PeLED在5 V电压下实现了7.1 cd/A的最大电流效率,比使用传统旋涂工艺制备的器件高出200%。这些结果证明原位热动态结晶过程有效地提高了钙钛矿材料的薄膜质量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/69a9/10673529/2b5c98bc6149/micromachines-14-02084-g001.jpg

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