Chen Chen, Han Tae-Hee, Tan Shaun, Xue Jingjing, Zhao Yepin, Liu Yunfei, Wang Haoran, Hu Wei, Bao Cong, Mazzeo Marco, Wang Rui, Duan Yu, Yang Yang
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Nano Lett. 2020 Jun 10;20(6):4673-4680. doi: 10.1021/acs.nanolett.0c01550. Epub 2020 May 26.
The present study systematically investigates the morphology and crystallization process of inorganic CsPbBr perovskite layer films fabricated by thermal coevaporation in conjunction with continuous low-temperature thermal annealing to promote in situ dynamic thermal crystallization. The results confirm for the first time that both the crystal grain size and the compactness of the CsPbBr films can be tuned during the thermal coevaporation fabrication process via in situ dynamic thermal crystallization. The performance of the PeLEDs employing the CsPbBr films as the emitter layer is investigated in detail with respect to the substrate temperature and deposition rate employed during deposition of the CsPbBr film. This study provides guidelines for developing suitable film production processes and highlights future challenges that must be addressed to facilitate the commercial development of large-area, uniform, and flexible perovskite-based optoelectronic devices.
本研究系统地研究了通过热共蒸发结合连续低温热退火制备的无机CsPbBr钙钛矿层薄膜的形态和结晶过程，以促进原位动态热结晶。结果首次证实，在热共蒸发制备过程中，通过原位动态热结晶可以调节CsPbBr薄膜的晶粒尺寸和致密性。详细研究了以CsPbBr薄膜作为发射层的PeLEDs在CsPbBr薄膜沉积过程中所采用的衬底温度和沉积速率方面的性能。本研究为开发合适的薄膜生产工艺提供了指导方针，并突出了为促进大面积、均匀和柔性钙钛矿基光电器件的商业发展而必须解决的未来挑战。
