Kadyrzhanov Dauren B, Kaliyekperov Malik E, Idinov Medet T, Kozlovskiy Artem L
Engineering Profile Laboratory, L.N. Gumilyov Eurasian National University, Astana 010008, Kazakhstan.
NJSC, Shakarim University of Semey, Semipalatinsk 071400, Kazakhstan.
Materials (Basel). 2023 Nov 20;16(22):7241. doi: 10.3390/ma16227241.
In this research, the formation processes of CuBiO films were examined using atomic force microscopy, energy dispersive analysis and X-ray diffraction analysis methods. The films were synthesized through electrochemical deposition from sulfuric acid solutions at a potential difference of 3.5 V. The duration of film growth was set to between 10 and 90 min to assess the possibility of controlled film growth and preserve the stability of their structural properties during growth over an extended period. An analysis of the data obtained by X-ray diffraction revealed that the resulting film samples are highly ordered structures with a tetragonal CuBiO phase. The results of the connection between the thickness of CuBiO films and strength properties depending on the time of film deposition were obtained. The results of the shielding efficiency of low-energy γ-quanta using CuBiO films were obtained.
在本研究中,使用原子力显微镜、能量色散分析和X射线衍射分析方法研究了CuBiO薄膜的形成过程。通过在3.5V的电位差下从硫酸溶液中进行电化学沉积来合成薄膜。将薄膜生长的持续时间设定为10至90分钟,以评估可控薄膜生长的可能性,并在长时间生长过程中保持其结构性能的稳定性。对X射线衍射获得的数据进行分析表明,所得的薄膜样品是具有四方CuBiO相的高度有序结构。获得了CuBiO薄膜厚度与取决于薄膜沉积时间的强度性能之间的关系结果。获得了使用CuBiO薄膜对低能γ量子的屏蔽效率结果。