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采用原位掺杂和浅台面结构的5μm间距铟镓砷光电二极管用于短波红外传感的设计与特性研究

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.

作者信息

Tillement Jules, Cervera Cyril, Baylet Jacques, Jany Christophe, Nardelli François, Di Rito Thomas, Georges Sylvain, Mugny Gabriel, Saxod Olivier, Gravrand Olivier, Baron Thierry, Roy François, Boeuf Frédéric

机构信息

STMicroelectronics, 850 Rue Jean Monnet, 38054 Crolles, France.

Univ. Grenoble Alpes, CEA, Leti, F38000 Grenoble, France.

出版信息

Sensors (Basel). 2023 Nov 16;23(22):9219. doi: 10.3390/s23229219.

DOI:10.3390/s23229219
PMID:38005607
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10674491/
Abstract

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm at -0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.

摘要

本文介绍了一种用于短波红外（SWIR）传感的浅台面光电二极管的完整设计、制造和特性表征。我们对像素间距小至3μm的收集1.55μm光子的光电二极管进行了特性表征和演示。对于像素间距为5μm的光电二极管，我们测得其外部量子效率高达54%。通过去除衬底和采用理想的抗反射涂层，我们估计在1.55μm处内部量子效率可达到77%。在-0.1V和23°C时，测得的最佳暗电流密度达到5nA/cm²。通过研究暗电流随温度的变化，对造成这种暗电流的主要因素进行了研究。我们还通过周边贡献分析强调了钝化的重要性以及MIS电容表征与暗电流性能之间的相关性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3a5/10674491/31048cc11702/sensors-23-09219-g019.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3a5/10674491/8a30733c447e/sensors-23-09219-g011.jpg
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Photodetectors based on graphene, other two-dimensional materials and hybrid systems.基于石墨烯、其他二维材料和混合系统的光探测器。
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