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通过电子密度分析揭示碳硼烷双硅烯稳定的硅炔/锗炔还原异常导致硅/锗异常氧化为硅/锗的现象

Unveiling the Anomaly of Reduction of Carborane-bis-silylene-Stabilised Silylone/Germylone Leading to Unusual Oxidation of Si /Ge to Si /Ge with EDA-NOCV Analyses.

作者信息

Suthar Sonam, Mondal Kartik Chandra

机构信息

Department of Chemistry, Indian Institute of Technology Madras, Chennai, 600036, India.

出版信息

Chemistry. 2024 Feb 16;30(10):e202303355. doi: 10.1002/chem.202303355. Epub 2023 Dec 28.

Abstract

Researchers have successfully isolated Si /Ge species, termed silylone and germylone, with two lone pairs of electrons on them. These elusive compounds have been stabilised in singlet ground states by using different donor base ligands. Driess et al. in particular have made strides in this area, isolating carborane-bis-silylene-stabilised silylone/germylone and their N /Pb analogues. Carborane (C B H ) plays a pivotal role as a redox-active ligand, converting from closo-carborane to nido-carborane with the addition of two electrons. Notably, anomalous oxidation of Si /Ge centres in carborane-bis-silylene-stabilised species to Si /Ge has been reported, resulting in the formation of dimeric Si -Si /Ge -Ge di-cationic units. The energy decomposition analysis coupled with natural orbital for chemical valence (EDA-NOCV) study focuses on the carborane-bis-silylene ligand in the free state, and its three other species, including silylone/germylone species. Interestingly, it reveals that the carborane unit in an anionic doublet state tends to form one electron-sharing bond and one dative bond with the counter fragment in its cationic doublet state. This helps us to rationalise why the carborane unit undergoes intramolecular electronic rearrangements leading to the formation of a di-anionic carborane unit with a significantly elongated C-C bond (2.38-2.68 Å) and undergoes unusual oxidation of Si /Ge to Si /Ge .

摘要

研究人员已成功分离出硅烯酮和锗烯酮这两种含两对孤对电子的硅/锗物种。通过使用不同的给体碱配体,这些难以捉摸的化合物已在单重态基态中得到稳定。特别是德里斯等人在这一领域取得了进展,分离出了碳硼烷 - 双硅烯稳定的硅烯酮/锗烯酮及其氮/铅类似物。碳硼烷(C₂B₁₀H₁₂)作为一种氧化还原活性配体发挥着关键作用,在添加两个电子后从闭式碳硼烷转变为巢式碳硼烷。值得注意的是,已有报道称碳硼烷 - 双硅烯稳定物种中的硅/锗中心异常氧化为Si⁺/Ge⁺,导致形成二聚体Si - Si⁺/Ge - Ge⁺二阳离子单元。结合化学价自然轨道的能量分解分析(EDA - NOCV)研究聚焦于自由态的碳硼烷 - 双硅烯配体及其其他三种物种,包括硅烯酮/锗烯酮物种。有趣的是,研究表明处于阴离子双重态的碳硼烷单元在其阳离子双重态下倾向于与反离子片段形成一个电子共享键和一个配位键。这有助于我们解释为什么碳硼烷单元会发生分子内电子重排,导致形成具有显著伸长的C - C键(2.38 - 2.68 Å)的二阴离子碳硼烷单元,并使硅/锗发生异常氧化生成Si⁺/Ge⁺ 。

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