Li Ying, Wu Feng, Li Yu, Feng Xin, Zheng Lumin, Liu Mingquan, Li Shuqiang, Qian Ji, Wang Zhaohua, Ren Haixia, Gong Yuteng, Wu Chuan, Bai Ying
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China.
Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, P. R. China.
Adv Mater. 2024 Feb;36(7):e2310270. doi: 10.1002/adma.202310270. Epub 2023 Dec 7.
While cost-effective sodium-ion batteries (SIBs) with crystalline silicon anodes promise high theoretical capacities, they perform poorly because silicon stores sodium ineffectively (capacity <40 mAh g ). To address this issue, herein an atomic-order structural-design tactic is adopted for obtaining unique multilevel gradient-ordered silicon (MGO-Si) by simple electrochemical reconstruction. In situ-formed short-range-, medium-range-, and long-range-ordered structures construct a stable MGO-Si, which contributes to favorable Na-Si interaction and fast ion diffusion channels. These characteristics afford a high reversible capacity (352.7 mAh g at 50 mA g ) and stable cycling performance (95.2% capacity retention after 4000 cycles), exhibiting record values among those reported for pure silicon electrodes. Sodium storage of MGO-Si involves an adsorption-intercalation mechanism, and a stepwise construction strategy of gradient-ordered structure further improves the specific capacity (339.5 mAh g at 100 mA g ). Reconstructed Si/C composites show a high reversible capacity of 449.5 mAh g , significantly better than most carbonaceous anodes. The universality of this design principle is demonstrated for other inert or low-capacity materials (micro-Si, SiO , SiC, graphite, and TiO ), boosting their capacities by 1.5-6 times that of pristine materials, thereby providing new solutions to facilitate sodium storage capability for better-performing battery designs.
虽然具有晶体硅阳极的高性价比钠离子电池(SIB)具有较高的理论容量,但由于硅储存钠的效率较低(容量<40 mAh g),其性能较差。为了解决这个问题,本文采用了一种原子级结构设计策略,通过简单的电化学重构获得独特的多级梯度有序硅(MGO-Si)。原位形成的短程、中程和长程有序结构构建了稳定的MGO-Si,这有助于形成良好的Na-Si相互作用和快速的离子扩散通道。这些特性赋予了高可逆容量(在50 mA g时为352.7 mAh g)和稳定的循环性能(4000次循环后容量保持率为95.2%),在报道的纯硅电极中表现出创纪录的值。MGO-Si的钠储存涉及吸附-嵌入机制,梯度有序结构的逐步构建策略进一步提高了比容量(在100 mA g时为339.5 mAh g)。重构的Si/C复合材料显示出449.5 mAh g的高可逆容量,明显优于大多数含碳阳极。这种设计原理的通用性在其他惰性或低容量材料(微硅、SiO、SiC、石墨和TiO)中得到了证明,将它们的容量提高到原始材料的1.5至6倍,从而为促进钠储存能力以实现性能更好的电池设计提供了新的解决方案。