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带电硅 - 水界面的拉曼光谱:第一性原理模拟

Raman Spectra of Electrified Si-Water Interfaces: First-Principles Simulations.

作者信息

Ye Zifan, Gygi Francois, Galli Giulia

机构信息

Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois 60637, United States.

Department of Computer Science, University of California, Davis, Davis, California 95616, United States.

出版信息

J Phys Chem Lett. 2024 Jan 11;15(1):51-58. doi: 10.1021/acs.jpclett.3c03122. Epub 2023 Dec 21.

DOI:10.1021/acs.jpclett.3c03122
PMID:38128587
Abstract

We investigate the Raman spectra of liquid water in contact with a semiconductor surface using first-principles molecular dynamics simulations. We focus on a hydrogenated silicon-water interface and compute the Raman spectra from time correlation functions of the polarizability. We establish a relationship between Raman spectral signatures and structural properties of the liquid at the interface, and we identify the vibrational impacts of an applied electric field. We show that negative bias leads to a reduction of the number of hydrogen bonds (HBs) formed between the surface and the topmost water layer and an enhancement of the HB interactions between water molecules. Instead, positive bias leads to an enhancement of both the HB interactions between water and the surface and between water molecules, creating a semi-ordered interfacial layer. Our work provides molecular-level insights into electrified semiconductor/water interfaces and the identification of specific structural features through Raman spectroscopy.

摘要

我们使用第一性原理分子动力学模拟研究了与半导体表面接触的液态水的拉曼光谱。我们聚焦于氢化硅 - 水界面,并从极化率的时间相关函数计算拉曼光谱。我们建立了拉曼光谱特征与界面处液体结构性质之间的关系,并确定了外加电场的振动影响。我们表明,负偏压导致表面与最上层水层之间形成的氢键(HBs)数量减少,以及水分子之间HB相互作用增强。相反,正偏压导致水与表面之间以及水分子之间的HB相互作用均增强,形成一个半有序的界面层。我们的工作为带电半导体/水界面提供了分子层面的见解,并通过拉曼光谱识别了特定的结构特征。

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