Chin Hao-Ting, Wang Deng-Chi, Wang Hao, Muthu Jeyavelan, Khurshid Farheen, Chen Ding-Rui, Hofmann Mario, Chuang Feng-Chuan, Hsieh Ya-Ping
Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan.
International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
ACS Appl Mater Interfaces. 2024 Jan 10;16(1):1705-1711. doi: 10.1021/acsami.3c13286. Epub 2023 Dec 25.
Two-dimensional (2D) metal nitrides have garnered significant interest due to their potential applications in future electronics and quantum systems. However, the synthesis of such materials with sufficient uniformity and at relevant scales remains an unaddressed challenge. This study demonstrates the potential of confined growth to control and enhance the morphology of 2D metal nitrides. By restricting the reaction volume of vapor-liquid-solid reactions, an enhanced precursor concentration was achieved that reduces the nucleation density, resulting in larger grain sizes and suppression of multilayer growth. Detailed characterization reveals the importance of balancing the energetic and kinetic aspects of tungsten nitride formation toward this ability. The introduction of a promoter enabled the realization of large-scale, single-layer tungsten nitride with a uniform and high interfacial quality. Finally, our advance in morphology control was applied to the production of edge-enriched 2D tungsten nitrides with significantly enhanced hydrogen evolution ability, as indicated by an unprecedented Tafel slope of 55 mV/dec.
二维（2D）金属氮化物因其在未来电子学和量子系统中的潜在应用而备受关注。然而，以足够的均匀性并在相关尺度上合成此类材料仍然是一个尚未解决的挑战。本研究展示了受限生长在控制和增强二维金属氮化物形态方面的潜力。通过限制气-液-固反应的反应体积，实现了更高的前驱体浓度，这降低了成核密度，从而得到更大的晶粒尺寸并抑制了多层生长。详细表征揭示了在氮化钨形成过程中平衡能量和动力学方面对实现这种能力的重要性。引入促进剂使得能够实现具有均匀且高质量界面的大规模单层氮化钨。最后，我们在形态控制方面的进展被应用于制备边缘富集的二维氮化钨，其析氢能力显著增强，前所未有的塔菲尔斜率为55 mV/dec即表明了这一点。
