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常压合成二维富氮二氮化钨。

Atmospheric-Pressure Synthesis of 2D Nitrogen-Rich Tungsten Nitride.

机构信息

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, P. R. China.

Laboratory for Computational Materials Engineering, Division of Energy and Environment, Graduate School at Shenzhen, Tsinghua University, Shenzhen, 518055, Guangdong, P. R. China.

出版信息

Adv Mater. 2018 Dec;30(51):e1805655. doi: 10.1002/adma.201805655. Epub 2018 Oct 24.

DOI:10.1002/adma.201805655
PMID:30357972
Abstract

2D transition metal nitrides, especially nitrogen-rich tungsten nitrides (W N , y > x), such as W N and W N , have a great potential for the hydrogen evolution reaction (HER) since the catalytic activity is largely enhanced by the abundant WN bonding. However, the rational synthesis of 2D nitrogen-rich tungsten nitrides is challenging due to the large formation energy of WN bonding. Herein, ultrathin 2D hexagonal-W N (h-W N ) flakes are synthesized at atmospheric pressure via a salt-templated method. The formation energy of h-W N can be dramatically decreased owing to the strong interaction and domain matching epitaxy between KCl and h-W N . 2D h-W N demonstrates an excellent catalytic activity for cathodic HER with an onset potential of -30.8 mV as well as an overpotential of -98.2 mV for 10 mA cm .

摘要

二维过渡金属氮化物,特别是富氮的钨氮化物(W N, y > x),如 W N 和 W N ,由于丰富的 WN 键合极大地增强了催化活性,因此在析氢反应(HER)中具有很大的潜力。然而,由于 WN 键的形成能较大,二维富氮钨氮化物的合理合成具有挑战性。本文通过盐模板法在常压下合成了超薄二维六方-W N (h-W N )薄片。由于 KCl 和 h-W N 之间的强烈相互作用和畴匹配外延,h-W N 的形成能显著降低。二维 h-W N 对阴极 HER 表现出优异的催化活性,起始电位为-30.8 mV,10 mA cm 时的过电位为-98.2 mV。

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