Padwal Sachin, Wagh Rahul, Thakare Jivan, Patil Rajendra
Science Department, Government Polytechnic Nashik, New Building Campus, Samangaon Road, Nashik Road, Nashik, 422101, Maharashtra, India.
Department of Physics, PSGVP Mandal's Arts Commerce & Science College, Shahada, Nandurbar, 425409, Maharashtra, India.
Heliyon. 2023 Dec 2;9(12):e23106. doi: 10.1016/j.heliyon.2023.e23106. eCollection 2023 Dec.
AgBiS, a copious and innocuous ternary metal chalcogenide affiliated with the I-V-IV group of semiconductors, was synthesized. With an energy gap of 1.2eV, it closely matches the optimal 1.39eV for solar cell absorbers. Importantly, this chalcogenide exhibits a high absorption coefficient of 10 cm at 600 nm. Using the successive ionic layer adsorption and reaction (SILAR) method; we deposited an AgBiS thin film onto a titanium dioxide (TiO) thin film. Characterization techniques encompassed XRD, SEM, EDXS, UV-Vis, EIS, and PEC performance analyses. The resulting TiO/AgBiS composite film ranged in thickness from 8 μm to 13 μm, with particle sizes spanning 20 nm-265 nm. Notably, the deposition of AgBiS onto the TiO film caused depreciation in the TiO energy gap from 3.1eV to 1.7eV. Furthermore, it significantly enhanced the TiO film's absorbance across the visible and near-infrared regions. Intriguingly, the TiO/AgBiS composite film also exhibited discernible photoelectrochemical behavior.
合成了AgBiS，一种大量且无毒的三元金属硫族化物，属于I-V-IV族半导体。其带隙为1.2eV，与太阳能电池吸收体的最佳1.39eV非常匹配。重要的是，这种硫族化物在600nm处表现出10 cm的高吸收系数。使用连续离子层吸附和反应（SILAR）方法，我们在二氧化钛（TiO）薄膜上沉积了AgBiS薄膜。表征技术包括XRD、SEM、EDXS、UV-Vis、EIS和PEC性能分析。所得的TiO/AgBiS复合膜厚度在8μm至13μm之间，粒径范围为20nm-265nm。值得注意的是，在TiO薄膜上沉积AgBiS导致TiO带隙从3.1eV降至1.7eV。此外，它显著增强了TiO薄膜在可见光和近红外区域的吸光度。有趣的是，TiO/AgBiS复合膜还表现出明显的光电化学行为。
