Ushanov Vitalii I, Eremeev Sergey V, Silkin Vyacheslav M, Chaldyshev Vladimir V
Ioffe Institute, 26 Politekhnicheskaya Str., 194021 Saint Petersburg, Russia.
Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences, 634055 Tomsk, Russia.
Nanomaterials (Basel). 2024 Jan 2;14(1):109. doi: 10.3390/nano14010109.
We reveal the feasibility of the localized surface plasmon resonance in a system of Bi nanoparticles embedded into an AlxGa1-xAs semiconductor matrix. With an ab initio determined dielectric function for bismuth and well-known dielectric properties of AlxGa1-xAs solid solution, we performed calculations of the optical extinction spectra for such metamaterial using Mie's theory. The calculations demonstrate a strong band of the optical extinction using the localized surface plasmons near a photon energy of 2.5 eV. For the semiconducting matrices with a high aluminum content x>0.7, the extinction by plasmonic nanoparticles plays the dominant role in the optical properties of the medium near the resonance photon energy.
我们揭示了嵌入AlxGa1-xAs半导体基质的铋纳米颗粒系统中局域表面等离子体共振的可行性。利用从头算确定的铋的介电函数以及AlxGa1-xAs固溶体的已知介电性质，我们使用米氏理论对这种超材料的光消光光谱进行了计算。计算结果表明，在光子能量接近2.5 eV时，利用局域表面等离子体激元会出现一个很强的光消光谱带。对于铝含量较高（x>0.7）的半导体基质，等离子体纳米颗粒引起的消光在共振光子能量附近的介质光学性质中起主导作用。
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