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构建低电阻率碳层以提高基于二甲基亚砜的紫硫镍铁矿太阳能电池的性能。

Construction of a Low-Resistivity Carbon Layer To Improve Performance in Dimethyl Sulfoxide-Based Kesterite Solar Cells.

作者信息

Wang Yiming, Yang Yanchun, Liu Ruijian, Li Shuyu, Luan Hongmei, Wang Lei, Siqin Letu, Zhu Chengjun

机构信息

Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West University Road, Hohhot, Inner Mongolia 010021, People's Republic of China.

School of Physics and Electronic Information, Inner Mongolia Normal University, 81 Zhaowuda Road, Hohhot, Inner Mongolia 010022, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2024 Jan 24;16(3):3442-3450. doi: 10.1021/acsami.3c16075. Epub 2024 Jan 16.

Abstract

Morphology of the absorber plays a decisive role in photoelectric conversion efficiency (PCE) of kersterite solar cells. CuZnSn(S,Se) (CZTSSe) grain prepared from dimethyl sulfoxide (DMSO)-based solution easily grows into large grains, which can lead to the formation of some holes at the back of the absorber. These holes cause the recombination of photocarriers and greatly weaken the performance of CZTSSe devices. Here, trace amounts of thioglycolic acid (TGA) are introduced to the DMSO-based solution, and a combination of TGA and metal is formed in the absorber, leading to the formation of fine grains in the CZTSSe absorber. Next, post-annealing (PA) in a N atmosphere is performed to promote Na diffusion, helping the transition from a fine-grain layer to a low-resistivity carbon layer at the interface between CZTSSe and Mo and avoiding the drawbacks of the DMSO-based system. Finally, the champion PCE of the CZTSSe device can be improved to 10.05% from 8.06%. The conclusions demonstrate that the construction of a carbon layer can boost the performance of CZTSSe devices.

摘要

吸收层的形态对克斯特矿太阳能电池的光电转换效率(PCE)起着决定性作用。由二甲基亚砜(DMSO)基溶液制备的CuZnSn(S,Se)(CZTSSe)晶粒很容易生长成大晶粒,这会导致在吸收层背面形成一些孔洞。这些孔洞会引起光生载流子的复合,并极大地削弱CZTSSe器件的性能。在此,将痕量硫代乙醇酸(TGA)引入到DMSO基溶液中,在吸收层中形成TGA与金属的组合,从而在CZTSSe吸收层中形成细晶粒。接下来,在N气氛中进行后退火(PA)以促进Na扩散,有助于在CZTSSe与Mo的界面处从细晶粒层转变为低电阻碳层,并避免DMSO基体系的缺点。最终,CZTSSe器件的最佳PCE可以从8.06%提高到10.05%。这些结论表明,碳层的构建可以提高CZTSSe器件的性能。

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