Ma Qiong, Cui Xin-Pan, Zhou Wen-Hui, Kou Dong-Xing, Zhou Zheng-Ji, Meng Yue-Na, Qi Ya-Fang, Yuan Sheng-Jie, Han Li-Tao, Wu Si-Xin
The Key Laboratory for Special Functional Materials of MOE, School of Materials, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China.
ACS Appl Mater Interfaces. 2023 Dec 6;15(48):55652-55658. doi: 10.1021/acsami.3c11262. Epub 2023 Nov 22.
Kesterite CuZnSn(S,Se) (CZTSSe) has been considered as the most promising absorber material for inorganic thin-film solar cells. Among the three main interfaces in CZTSSe-based solar cells, the CZTSSe/Mo back interface plays an essential role in hole extraction as well as device performance. During the selenization process, the reaction between CZTSSe and Mo is one of the main reasons that lead to a large open circuit voltage () deficit, low short circuit current (), and fill factor. In this study, 2D TiC-MXene was introduced as an intermediate layer to optimize the interface between the CZTSSe absorber layer and Mo back contact. Benefiting from the 2D TiC-MXene intermediate layer, the reaction between CZTSSe and Mo was effectually suppressed, thus, significantly reducing the thickness of the detrimental Mo(S,Se) layer as well as interface recombination at the CZTSSe/Mo back interface. As a result, the power conversion efficiency of the champion device fabricated with the 2D TiC-MXene intermediate layer was improved from 10.89 to 13.14% (active-area efficiency). This study demonstrates the potential use of the 2D TiC-MXene intermediate layer for efficient CZTSSe solar cells and promotes a deeper understanding of the back interface in CZTSSe solar cells.
黄铜矿CuZnSn(S,Se)（CZTSSe）被认为是无机薄膜太阳能电池中最具潜力的吸收层材料。在基于CZTSSe的太阳能电池的三个主要界面中，CZTSSe/Mo背界面在空穴提取以及器件性能方面起着至关重要的作用。在硒化过程中，CZTSSe与Mo之间的反应是导致开路电压（）大幅损失、短路电流（）较低以及填充因子较低的主要原因之一。在本研究中，引入二维TiC-MXene作为中间层，以优化CZTSSe吸收层与Mo背接触之间的界面。受益于二维TiC-MXene中间层，CZTSSe与Mo之间的反应得到有效抑制，从而显著减小了有害的Mo(S,Se)层的厚度以及CZTSSe/Mo背界面处的界面复合。结果，采用二维TiC-MXene中间层制备的最佳器件的功率转换效率从10.89%提高到了13.14%（有源区效率）。本研究证明了二维TiC-MXene中间层在高效CZTSSe太阳能电池中的潜在应用，并促进了对CZTSSe太阳能电池背界面的更深入理解。
