Sun Haoliang, Wang Haoliang, Dong Shaohua, Dai Shijie, Li Xiaoguo, Zhang Xin, Deng Liangliang, Liu Kai, Liu Fengcai, Tan Hua, Xue Kun, Peng Chao, Wang Jiao, Li Yi, Yu Anran, Zhu Hongyi, Zhan Yiqiang
Peng Cheng Laboratory Shenzhen 518055 China
Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
Nanoscale Adv. 2023 Dec 6;6(2):559-569. doi: 10.1039/d3na00677h. eCollection 2024 Jan 16.
Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO/CsFAMA/ITO transistors. The device could mimic a variety of biological synaptic functions and required ultralow-power consumption during operation with an ultrafast speed of >0.1 μs under an optical stimulus of about 3 fJ, which is equivalent to biological synapses. Moreover, Pavlovian conditioning and visual perception tasks could be implemented using the spike-number-dependent plasticity (SNDP) and spike-rate-dependent plasticity (SRDP). This study suggests that the proposed CsFAMA synapse with an Al/MoO interface has the potential for ultralow-power neuromorphic information processing.
光电突触晶体管在下一代类脑计算系统的应用中颇具吸引力，特别是因其可见光操作和传感器内计算能力。然而，从材料角度来看，很难制造出在功能和功耗方面都符合预期的器件，这促使人们呼吁在材料和器件构造方面进行更大的创新。在本研究中，我们创新性地将新型钙钛矿载流子供应层与Al/MoO界面载流子调节层相结合，制造出光电突触器件，即Al/MoO/CsFAMA/ITO晶体管。该器件能够模拟多种生物突触功能，并且在约3 fJ的光刺激下，以大于0.1 μs的超快速度运行时所需功耗超低，这与生物突触相当。此外，使用依赖脉冲数的可塑性（SNDP）和依赖脉冲率的可塑性（SRDP）可以实现经典条件反射和视觉感知任务。这项研究表明，所提出的具有Al/MoO界面的CsFAMA突触具有进行超低功耗神经形态信息处理的潜力。
