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用于近红外光通信的VO/MoO异质结人工光电突触器件

VO/MoO Heterojunctions Artificial Optoelectronic Synapse Devices for Near-Infrared Optical Communication.

作者信息

Guo Fuhai, Liu Yunjie, Zhang Mingcong, Yu Weizhuo, Li Siqi, Zhang Bo, Hu Bing, Li Shuangshuang, Sun Ankai, Jiang Jianyu, Hao Lanzhong

机构信息

College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China.

School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China.

出版信息

Small. 2024 Aug;20(31):e2310767. doi: 10.1002/smll.202310767. Epub 2024 Mar 8.

DOI:10.1002/smll.202310767
PMID:38456772
Abstract

Artificial optoelectronic synapses (OES) have attracted extensive attention in brain-inspired information processing and neuromorphic computing. However, OES at near-infrared wavelengths have rarely been reported, seriously limiting the application in modern optical communication. Herein, high-performance near-infrared OES devices based on VO/MoO heterojunctions are presented. The textured MoO films are deposited on the sputtered VO film by using the glancing-angle deposition technique to form a heterojunction device. Through tuning the oxygen defects in the VO film, the fabricated VO/MoO heterojunction exhibits versatile electrical synaptic functions. Benefiting from the highly efficient light harvesting and the unique interface effect, the photonic synaptic characteristics, mainly including the short/long-term plasticity and learning experience behavior are successfully realized at the O (1342 nm) and C (1550 nm) optical communication wavebands. Moreover, a single OES device can output messages accurately by converting light signals of the Morse code to distinct synaptic currents. More importantly, a 3 × 3 artificial OES array is constructed to demonstrate the impressive image perceiving and learning capabilities. This work not only indicates the feasibility of defect and interface engineering in modulating the synaptic plasticity of OES devices, but also provides effective strategies to develop advanced artificial neuromorphic visual systems for next-generation optical communication systems.

摘要

人工光电突触(OES)在受脑启发的信息处理和神经形态计算中受到了广泛关注。然而,近红外波长的OES鲜有报道,这严重限制了其在现代光通信中的应用。在此,我们展示了基于VO/MoO异质结的高性能近红外OES器件。通过掠角沉积技术将纹理化的MoO薄膜沉积在溅射的VO薄膜上,形成异质结器件。通过调节VO薄膜中的氧缺陷,制备的VO/MoO异质结展现出多种电突触功能。受益于高效的光捕获和独特的界面效应,在O(1342 nm)和C(1550 nm)光通信波段成功实现了主要包括短期/长期可塑性和学习经验行为的光子突触特性。此外,单个OES器件可以通过将摩尔斯电码的光信号转换为不同的突触电流来准确输出信息。更重要的是,构建了一个3×3的人工OES阵列,以展示其令人印象深刻的图像感知和学习能力。这项工作不仅表明了缺陷和界面工程在调节OES器件突触可塑性方面的可行性,还为开发用于下一代光通信系统的先进人工神经形态视觉系统提供了有效策略。

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