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RC-IGBT中超级结的工作机制分析及一种新型无折返部分肖特基集电极超级结RC-IGBT

Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT.

作者信息

Yuan Song, Li Yichong, Hou Min, Jiang Xi, Gong Xiaowu, Hao Yue

机构信息

The Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.

The Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.

出版信息

Micromachines (Basel). 2023 Dec 29;15(1):73. doi: 10.3390/mi15010073.

DOI:10.3390/mi15010073
PMID:38258192
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10819826/
Abstract

This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time. A Partial Schottky Collector Superjunction Reverse Conduction IGBT (PSC-SJ-RC-IGBT) is proposed to address these issues. The new structure eliminates the snapback phenomenon. Furthermore, by leveraging the unipolar conduction of the Schottky diode and its fast turn-off characteristics, the proposed device significantly reduces the turn-off power consumption and reverse recovery charge. With medium pillar doping concentration, the turn-off loss of the PSC-SJ-RC-IGBT decreases by 54.1% compared to conventional superjunction RC-IGBT, while the reverse recovery charge is reduced by 52.6%.

摘要

本文基于载流子分布探究了RC-IGBT中超结结构的运行机制，并首次分析了其在RC-IGBT中应用的优势与挑战。为解决这些问题，提出了一种部分肖特基集电极超结反向导通绝缘栅双极型晶体管（PSC-SJ-RC-IGBT）。新结构消除了反向击穿现象。此外，通过利用肖特基二极管的单极传导及其快速关断特性，所提出的器件显著降低了关断功耗和反向恢复电荷。在中等柱掺杂浓度下，PSC-SJ-RC-IGBT的关断损耗相较于传统超结RC-IGBT降低了54.1%，而反向恢复电荷减少了52.6%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e183/10819826/cd1012f7d05d/micromachines-15-00073-g018.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e183/10819826/cd1012f7d05d/micromachines-15-00073-g018.jpg

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