Zhang Xiaodong, Shen Pei, Zou Zhijie, Song Mingxin, Zhang Linlin
School of Applied Science and Technology, Hainan University, Haikou 570228, China.
School of Mechanical and Electronic Engineering, Pingxiang University, Pingxiang 337055, China.
Micromachines (Basel). 2022 May 3;13(5):734. doi: 10.3390/mi13050734.
In this paper, a 4H-SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H-SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floating layer increases the distributed path resistance below the buffer layer to eliminate the snapback phenomenon. In addition, the P-floating layer acts as an amplifying stage for the hole currents' injection. The snapback-free structure features a half-cell pitch of 10 μm. For the same forward voltage drop, the turn-off loss of the MP-IGBT structure is reduced by 42%.
本文提出了一种具有多功能P浮层的4H-SiC绝缘栅双极型晶体管（MP-IGBT），并通过Silvaco TCAD模拟进行了研究。与传统的4H-SiC场截止绝缘栅双极型晶体管（FS-IGBT）相比，MP-IGBT结构在N缓冲层下方具有P浮层结构。P浮层增加了缓冲层下方的分布路径电阻，以消除回跳现象。此外，P浮层充当空穴电流注入的放大级。无回跳结构的半单元间距为10μm。在相同的正向压降下，MP-IGBT结构的关断损耗降低了42%。
