Novel Ge-Based Plasma TFET with High Rectification Efficiency for 2.45 GHz Microwave Wireless Weak Energy Transmission.

The enhancement of rectification efficiency in 2.45 GHz microwave wireless weak energy transmission systems is centred on rectifier device selection. The overall rectification efficiency of traditional rectifier devices is low in weak energy density situations, failing to fulfil the commercial requirements of this region. The subthreshold swing of the emerging device TFET exceeds 60 mV/dec, which has the advantages of a large open-state current and a small off-state current in the corresponding region of the weak energy density. In view of this, this paper designs a double-gate plasma rectifier TFET with an embedded n heavily doped layer on the basis of a PNPN-structured TFET, where the device is simulated with the MixedMode module of Silvaco TCAD 2018, the rectification efficiency at -10 dBm is 44.12%, which is 10.61% higher than that of the PNPN-TFET, and the efficiency in the weak energy density region is generally 10% or more than that of commercial HSMS devices, showing obvious rectification advantages.